diode Related Articles

IntroductionA clamper circuit is an electronic circuit that shifts the DC level of a signal to a desired level without changing the shape of the applied waveform. Unlike clipper circuits that cut or limit portions of a signal, clampers preserve the entire waveform while repositioning it vertically on the voltage axis. This is achieved by fixing a specific part of the pulse signal (such as the positive or negative peak) at a specified voltage value while maintaining the original waveform shape unchanged.What is a Clamper Circuit?Ⅰ Clamper Circuit ApplicationsClamper circuits are widely used in various electronic systems and display devices. Key applications include:Television Systems: Clamper circuits restore the DC component of video signals and maintain the synchronization pulse at a fixed voltage level, ensuring stable image positioning and proper sync signal separation.Oscilloscopes and Test Equipment: Used to stabilize waveform display by fixing reference levels, preventing image drift caused by varying scanning speeds or DC component loss.Radar and Sonar Systems: Employed to maintain consistent signal levels for accurate detection and ranging.Amplifier Protection: Protects sensitive amplifier input stages from excessive DC offset voltages.Power Supply Circuits: Helps in voltage regulation and transient suppression.Communication Systems: Restores DC levels in signal transmission and reception circuits.Digital Logic Circuits: Provides voltage level shifting between different logic families.A basic clamper circuit comprises a capacitor, a diode, and a resistor. More sophisticated designs may include additional components such as bias voltage sources. In the following sections, we will explore different types of diode clamper circuits and compare their characteristics and performance.Ⅱ Diode Clamper Circuit2.1 Why Use Diode Clamper Circuits?While diode clipper circuits limit or cut the amplitude of waveforms, many applications require preserving the complete waveform while shifting its DC level. Clamper circuits fulfill this requirement by shifting the signal vertically to position its peak value at a desired level without distorting the original waveform shape.A diode clamper circuit utilizes the relatively stable forward voltage drop of the diode (typically 0.6-0.7V for silicon diodes or 0.2-0.3V for Schottky diodes) and its low reverse leakage current characteristics. These properties enable the circuit to clamp the potential at specific points and maintain the peak or trough of periodically changing waveforms at predetermined DC levels.Dual-Diode Clamper Protection: In protection applications, two diodes connected in reverse parallel configuration provide bidirectional clamping. Only one diode conducts at any given time while the other remains in the off state. This arrangement limits both positive and negative voltage excursions to approximately ±0.6V (for silicon diodes), effectively protecting sensitive circuit components from overvoltage conditions and electrostatic discharge (ESD).2.2 Diode Clamper Circuit TypesDiode clamper circuits are classified into two main categories: positive clampers and negative clampers. Each category includes both simple (unbiased) and biased variants.✅ Diode Positive ClamperOperating Principle:Positive Half Cycle: The diode is reverse-biased (OFF), acting as an open circuit. The capacitor charges to the peak input voltage Vi through the load resistor.Negative Half Cycle: The diode becomes forward-biased (ON), acting as a short circuit. The capacitor maintains its charge, and the output voltage Vo ≈ 0V (or slightly positive due to diode forward voltage drop).According to Kirchhoff's voltage law, the output waveform can be calculated for both positive and negative cycle conditions.(1) Simple Positive Clamper (Unbiased)Figure 1. Simple Positive Clamper CircuitOperation:When Vi is in the negative half cycle: D → ON, capacitor C charges to voltage V (negative on left plate, positive on right plate), Vo ≈ 0V.When Vi is in the positive half cycle: D → OFF, Vo = VC + Vi = 2V (assuming input amplitude is V).(2) Biased Positive ClamperFigure 2. Biased Positive Clamper CircuitSimple Method to Determine Output Waveform:The reference point of the output waveform on the voltage axis is determined by the bias voltage V1.The diode orientation determines the direction of waveform shift. If the diode points upward , the waveform shifts upward; if it points downward , the waveform shifts downward.After determining the reference point and direction, sketch the original waveform on the output coordinate axis using the reference point as the baseline to obtain the clamped output waveform.↪️ Diode Positive Clamper Circuits Comparison:Figure 3. Positive Clamper Circuits Comparison✅ Negative Clamper Circuit(1) Simple Negative Clamper (Unbiased)Figure 4. Simple Negative Clamper CircuitOperation:When Vi is in the positive half cycle: D → ON, capacitor C charges to voltage V (positive on left plate, negative on right plate), Vo ≈ 0V.When Vi is in the negative half cycle: D → OFF, Vo = -(VC + |Vi|) = -2V (assuming input amplitude is V).(2) Biased Negative ClamperFigure 5. Biased Negative Clamper CircuitOperation:When Vi is in the positive half cycle: Diode D → ON, capacitor C charges to voltage V (positive on left plate, negative on right plate), Vo = +V1 or -V1 (depending on bias polarity).When Vi is in the negative half cycle: Diode D → OFF. With a sufficiently large RC time constant, Vo = VC + Vi (negative half cycle) ≈ -2V + bias voltage.↪️ Diode Negative Clamper Circuits Comparison:Figure 6. Negative Clamper Circuits Comparison✅ Key Design ConsiderationsDiode Orientation: The direction of the diode determines whether the waveform shifts upward (positive clamping) or downward (negative clamping).Bias Voltage: The bias voltage establishes the reference point (baseline) of the clamped waveform on the voltage axis.RC Time Constant: The product of capacitance (C) and load resistance (R) must be sufficiently large—typically RC ≥ 10T, where T is the period of the input waveform. This ensures the capacitor maintains its charge between cycles, preventing droop and maintaining clamping accuracy.Diode Selection: Choose diodes with low forward voltage drop (Schottky diodes for precision applications) and fast recovery time for high-frequency signals.Capacitor Selection: Use capacitors with low leakage current (film or ceramic types) to maintain charge stability.Ⅲ Practical Application: GPIO Protection Using Clamper CircuitsA practical application of clamping diodes is found in GPIO (General Purpose Input/Output) pin protection circuits. This example demonstrates the use of dual-diode clampers in the Qualcomm MSM8909 platform to prevent electrostatic discharge (ESD) damage and electrical overstress (EOS).Circuit AnalysisFigure 7. MSM8909 GPIO Internal Protection CircuitCircuit Configuration:Clamping diode D1: Cathode connected to VDD (positive supply rail), anode connected to GPIO pinClamping diode D2: Anode connected to GND (ground), cathode connected to GPIO pinProtection Mechanism:When input voltage > VDD: D1 conducts (forward-biased), D2 is off (reverse-biased). The GPIO pin voltage is clamped to approximately VDD + 0.6V, with excess current shunted to the VDD rail.When input voltage < GND: D1 is off (reverse-biased), D2 conducts (forward-biased). The GPIO pin voltage is clamped to approximately GND - 0.6V, with excess current shunted to ground.Normal operation (GND < Vin < VDD): Both diodes remain off, allowing normal signal operation without interference.This dual-diode configuration effectively limits the input voltage to the safe operating range of [GND - 0.6V, VDD + 0.6V], protecting the GPIO pin from ESD events and voltage transients.Diagnostic Procedure: Testing GPIO Protection DiodesTo determine whether a GPIO pin has been damaged by ESD or EOS, follow this multimeter-based diagnostic procedure:Equipment Required:Digital multimeter with diode test functionAnti-static wrist strap (recommended)Circuit schematic or pinout diagramTest Procedure:Power Down: Ensure the device is completely powered off and disconnected from all power sources.Test Diode D2 (Lower Clamp to GND):Set multimeter to diode test modeConnect RED probe to motherboard GNDConnect BLACK probe to the GPIO pin under testExpected Result: Forward voltage drop of 0.4-0.7V (typically 0.6V for silicon diodes)Failure Indication: Reading significantly outside this range indicates D2 damage:Very low reading (< 0.2V): Diode is shortedOpen circuit (OL or > 2V): Diode is openTest Diode D1 (Upper Clamp to VDD):Reverse probe connections:Connect RED probe to the GPIO pin under testConnect BLACK probe to VDD rail (or appropriate power pin)Expected Result: Forward voltage drop of 0.4-0.7VFailure Indication: Similar interpretation as D2 testReverse Bias Test (Optional):Reverse the probe connections for each testExpected Result: Open circuit (OL) or very high resistanceFailure Indication: Low resistance in reverse bias indicates diode breakdownImportant Notes:Always discharge any residual capacitance before testingSome modern ICs may have additional protection elements that affect readingsCompare readings with a known-good board when possibleDocument all measurements for troubleshooting recordsIf protection diodes are damaged, the internal GPIO circuitry may also be compromisedFrequently Asked Questions about Clamper Circuits1. What is a clamper circuit and what are its types?A clamper circuit is an electronic circuit that shifts the DC level of an AC signal to a desired voltage level without altering the shape of the waveform. Since the DC level is shifted, a clamper circuit is also called a level shifter. Clamper circuits utilize energy storage elements, primarily capacitors. A basic clamper circuit consists of a capacitor, a diode, a resistor, and optionally a DC bias voltage source. The main types are: positive clampers (shift waveform upward), negative clampers (shift waveform downward), and each can be either biased (with reference voltage) or unbiased (simple configuration).2. How do clamper circuits work?A clamper circuit operates by using a capacitor to store charge during one half-cycle of the input signal and a diode to control the charging and discharging process. During the half-cycle when the diode conducts, the capacitor charges to approximately the peak voltage of the input signal. During the opposite half-cycle, the diode blocks, and the capacitor voltage adds to (or subtracts from) the input voltage, effectively shifting the entire waveform up or down. The RC time constant must be large enough (typically RC ≥ 10T) to maintain the capacitor charge between cycles, ensuring consistent clamping action.3. What is a diode clamper circuit?A diode clamper circuit is a specific implementation of a clamper that uses a diode as the switching element to control the charging of the capacitor. The circuit consists of a capacitor, a diode, and a resistor arranged to shift the waveform to a desired DC level. The diode's unidirectional current flow property ensures that the capacitor charges during one half-cycle and maintains its charge during the other half-cycle, creating the clamping effect. The diode's orientation determines whether the circuit functions as a positive or negative clamper.4. How many diodes are used in a clamper circuit?A basic clamper circuit requires a minimum of one diode, along with a capacitor and a resistor. However, protection circuits and bidirectional clampers may use two diodes connected in reverse parallel (anti-parallel) configuration to provide clamping in both positive and negative directions. Some advanced designs may incorporate additional diodes for improved performance, temperature compensation, or multiple voltage level clamping. An independent DC voltage source may also be added to create biased clamper circuits with adjustable reference levels.5. What is a clamping diode used for?Clamping diodes serve multiple purposes in electronic circuits: (1) Level Shifting: They shift AC signals to desired DC levels in signal processing applications. (2) Voltage Protection: They protect sensitive components from overvoltage conditions by limiting voltage excursions to safe levels (typically within ±0.6V of supply rails). (3) ESD Protection: In integrated circuits, clamping diodes protect GPIO pins and other I/O interfaces from electrostatic discharge damage. (4) Transient Suppression: They absorb voltage spikes and transients in power supply and signal lines. (5) Signal Restoration: In video and communication systems, they restore DC components that may be lost during AC coupling or transmission.6. What is the difference between a clipper and a clamper circuit?Clipper circuits cut off or limit portions of the input waveform that exceed certain voltage levels, fundamentally changing the waveform shape. Clamper circuits preserve the entire waveform shape but shift its DC level (vertical position on the voltage axis). Clippers are used for waveform shaping and overvoltage protection, while clampers are used for DC restoration and level shifting. Clippers typically use diodes with resistors, while clampers require capacitors in addition to diodes and resistors.7. Why is the RC time constant important in clamper circuits?The RC time constant (τ = R × C) determines how quickly the capacitor charges and discharges. For proper clamping action, the RC time constant must be much larger than the period of the input signal (typically RC ≥ 10T). This ensures that: (1) The capacitor charges quickly during the conducting half-cycle of the diode, (2) The capacitor maintains its charge during the non-conducting half-cycle with minimal voltage droop, and (3) The clamping level remains stable across multiple cycles. If the RC time constant is too small, the capacitor will discharge significantly between cycles, resulting in poor clamping performance and waveform distortion.ConclusionClamper circuits are essential components in modern electronics, providing DC level shifting and voltage protection across a wide range of applications. Understanding the operating principles of positive and negative clampers, both biased and unbiased configurations, enables engineers to design effective signal conditioning and protection circuits. The practical application in GPIO protection demonstrates the critical role of clamping diodes in safeguarding sensitive integrated circuits from ESD and overvoltage damage. Proper component selection, particularly regarding the RC time constant and diode characteristics, is crucial for optimal clamper circuit performance.Note: This article was originally published in 2020 and has been updated in 2025 to reflect current technology standards, correct technical inaccuracies, and include additional practical information about clamper circuit applications and diagnostics.

For electronics enthusiasts, technicians, and engineers, the diode is a fundamental component. Knowing how to verify its condition is a critical skill for troubleshooting circuits. Whether you are using a classic analog multimeter or a modern digital multimeter (DMM), the principles remain the same.In this updated article, we will cover the testing methods for 11 different types of diodes, ranging from standard rectifiers to specialized laser and high-frequency components.I. Testing of a Standard DiodeVideo Overview: The basics of testing diode polarity and continuity.Modern Tip for 2025: Most technicians now use Digital Multimeters.Analog Meter: Looks for needle deflection (resistance).Digital Meter (DMM): Use the "Diode Mode" (symbol: ➔+). A good silicon diode drops between 0.5V and 0.8V. If it reads "OL" (Open Loop) in both directions, it is open. If it reads 0.00V, it is shorted.II. Testing 11 Specialized Types of Diodes2.1 Testing of Low-power Crystal DiodesA. Discriminating Positive and Negative Electrodes(1) Housing Symbol: Observe the symbol mark on the housing. Usually, the diode is marked with a standard arrow symbol. The end with the triangular arrow is the positive electrode (Anode), and the flat line is the negative electrode (Cathode).(2) Color Bands/Dots: On point-contact diodes, look for polar color points (white or red). Generally, the marked end is positive. However, on standard cylindrical diodes, the colored ring/band indicates the negative (Cathode) side.(3) Multimeter Measurement: Using the resistance setting (Ohms), the connection that results in a smaller resistance value indicates forward bias. For analog meters, the black lead acts as positive internal voltage; for digital meters, the red lead is positive.B. Detecting Highest Working Frequency ($f_M$)The operating frequency depends on the internal construction. Point-contact diodes are typically high-frequency, while surface-contact diodes are for low-frequency rectification. When testing with an analog multimeter at $R times 1k$, high-frequency tubes often show a forward resistance of less than 1kΩ.C. Detecting Highest Reverse Breakdown Voltage ($V_{RM}$)The highest reverse working voltage is the peak AC voltage the diode can block. Note that the actual breakdown voltage is usually much higher (often 2x) than the rated working voltage to ensure safety margins.2.2 Testing of Glass-Sealed Silicon High-Speed Switching DiodesCommon examples include the 1N4148. The testing method is identical to ordinary diodes. However, note that the forward resistance might appear slightly higher than power rectifiers. Test values (Analog): Forward resistance 5kΩ to 10kΩ ($R times 1k$ scale); Reverse resistance is infinite.2.3 Testing of Fast Recovery and Ultra-Fast Recovery DiodesThese are critical in Switching Power Supplies (SMPS). Testing follows the plastic-encapsulated silicon rectifier method.Step 1: Use $R times 1k$ block. Forward resistance is roughly 4.5kΩ; reverse is infinite.Step 2: Use $R times 1$ block. Forward resistance drops to a few ohms; reverse remains infinite.2.4 Testing of Bidirectional Trigger Diode (DIAC)Commonly found in dimmer switches (e.g., DB3). Resistance Check: With a multimeter at $R times 1k$, resistance should be infinite in both directions. If the pointer swings or the DMM reads low ohms, the component has a leakage fault.Voltage Test: To test the breakover voltage ($V_{BO}$), you need a high-voltage source (like a Megohmmeter). Measure the voltage at which conduction begins. The symmetry is good if the forward and reverse breakover voltages are close in value.2.5 Testing of Transient Voltage Suppression Diode (TVS)TVS diodes protect circuits from voltage spikes.Unipolar TVS: Tests like a normal diode. Forward resistance ~4kΩ, reverse infinite.Bipolar (Two-way) TVS: Should read infinite resistance in both directions during a standard low-voltage multimeter test. If it conducts, it is likely shorted (which is its failure mode after absorbing a massive spike).2.6 Testing of High-Frequency DiodesA. Polarity: Usually identified by color codes. Similar to standard diodes, the band (often green) indicates the Cathode (negative).B. Measurement: Using a 500-type multimeter at $R times 1k$, normal forward resistance is 5kΩ to 5.5kΩ, with infinite reverse resistance.2.7 Testing of Varactor DiodeUsed in tuning circuits. Set the multimeter to $R times 10k$. Regardless of lead swapping, the resistance between pins should remain infinite. Any resistance reading suggests leakage or breakdown. To test the actual capacitance change, you would need an LCR meter or specialized tester.2.8 Testing of Monochromatic Light-Emitting Diodes (LEDs)Note on Voltage: Modern LEDs (especially Blue and White) typically require >3V to light up. The traditional "1.5V battery" trick may not work.The Test: Most Digital Multimeters in "Diode Mode" output enough voltage to make an LED glow faintly. If using an external power source: Connect a 3V battery (like a CR2032) or two 1.5V batteries in series. Result: When positive connects to positive, the LED should light up. If it remains dark in both orientations, it is open.2.9 Testing of Infrared (IR) LEDsA. Polarity: Long pin is Anode (+), Short pin is Cathode (-). Internally, the wider electrode is usually the negative side.B. Resistance Test: At $R times 1k$, forward resistance is ~30kΩ, reverse >500kΩ.C. The Camera Trick (New): Since human eyes cannot see IR light, power the LED and look at it through your smartphone camera. Digital sensors can "see" IR light—it will appear purple/white on the screen if the LED is working.2.10 Testing of Infrared Receiving DiodeA. Polarity: On the receiving window side, pins are usually positive (left) and negative (right), but always verify with the datasheet. Look for a beveled/oblique edge on the casing; the pin closest to the bevel is usually negative.B. Test: In ambient light, measure resistance. Shield the window with your hand (darkness) -> resistance should increase. Expose it to light -> resistance should decrease. This change confirms the sensor is reactive.2.11 Testing of Laser DiodeSAFETY WARNING: Never look directly into a laser diode or point it at eyes.Using a multimeter at $R times 1k$: Determine pins similar to a normal diode. Note: Laser diodes have a higher forward voltage drop than standard diodes. The meter pointer might deflect only slightly (high resistance) even in the forward direction. Reverse resistance should be infinite.Frequently Asked Questions (FAQ)1. What is a diode and its symbol?A diode is an electronic component that functions as a one-way valve for electricity, allowing current to flow in only one direction. In circuit diagrams, it is represented by a triangle pointing towards a line (the line represents the barrier/cathode).2. What is special about a diode?Its ability to block reverse current is unique. Furthermore, special types like LEDs emit photons (light) when electrons change energy levels across the junction. This electroluminescence makes them essential for modern lighting.3. Are diodes AC or DC?Diodes work with both but handle them differently. They allow DC to pass. When applied to AC, they block the negative half of the cycle, effectively converting Alternating Current (AC) into pulsating Direct Current (DC). This process is called Rectification.4. Why do we use a Zener diode?Unlike normal diodes that burn out if forced to conduct backwards, Zener diodes are designed to conduct in reverse at a specific, precise voltage (Breakdown Voltage). This makes them perfect for Voltage Regulation and reference voltages.5. What is the unit of a diode?The diode itself is a component, not a quantity, so it has no "unit." However, its characteristics are measured in standard units: Forward Voltage ($V_F$): Volts (V) Current Rating: Amperes (A) Power Dissipation: Watts (W)6. Do diodes have resistance?Yes, but it is non-linear. Unlike a resistor which has a fixed value, a diode's resistance changes dynamically based on the voltage applied. When forward-biased, resistance is very low; when reverse-biased, it is extremely high.7. Does a diode reduce current?Indirectly, yes. Because a diode consumes a small amount of voltage (Voltage Drop, typically 0.7V for Silicon), the total voltage available to the load decreases, which can slightly reduce current according to Ohm's Law. It also completely blocks current flowing in the wrong direction.8. How are diodes classified?They are classified by material (Silicon, Germanium), construction (Point contact, Surface mount/SMD), and function (Rectifier, Zener, Schottky, LED, Photodiode, Laser, TVS).9. What is the most common diode?The 1N4007 is likely the most common power rectifier diode, found in almost every adapter. For low-signal switching, the 1N4148 is the industry standard.10. What is the difference between a Zener and a Schottky diode?Schottky Diodes are designed for speed and low voltage drop (efficiency), often used in high-speed switching. Zener Diodes are designed for voltage stability, meant to operate in the reverse breakdown region to regulate voltage.11. What is the difference between Schottky diode and normal diode?A normal PN junction diode connects P-type and N-type semiconductors. A Schottky diode connects an N-type semiconductor to a Metal plate. This results in a much lower forward voltage drop (approx. 0.2V-0.4V) and faster switching speeds compared to normal silicon diodes (0.7V).12. Why is it called a diode?The name comes from the Greek root "di" (two) and "ode" (path/electrode). It literally refers to a device with two electrodes: the Anode and the Cathode.13. Is a diode the same as a resistor?No. A resistor limits current equally in both directions (linear). A diode acts as a gate, allowing current only one way (non-linear). Using one in place of the other usually causes circuit failure.14. How much voltage can a diode take?This depends on the "Peak Inverse Voltage" (PIV) rating. Small signal diodes might handle 75V, while rectifier diodes like the 1N4007 can withstand up to 1000V.15. Can a resistor replace a diode?Generally, no. Since a resistor conducts both ways, replacing a diode (rectifier) with a resistor would allow AC to pass where DC is required, potentially blowing up capacitors or destroying sensitive chips.

When it comes to low-power, high-current, and ultra-high-speed semiconductor devices, many electronics hobbyists or engineers must first think of Schottky diodes (SBD). But do you really know how to use Schottky diodes? Compared with other diodes, what is special about Schottky diodes? This article will answer these questions for you and introduce Schottky diodes in details. This short video gives a brief introduction to Schottky Diode Catalog I. Schottky Diode Brief Introduction II. How does Schottky Diode Work? III. The Structure of Schottky Diode IV. How to Test Schottky Diode? V. Pros and Cons of Schottky Diode VI. Where to Use Schottky Diode? VII. How to Use Schottky Diode Correctly? FAQ I. Brief Introduction to Schottky Diode  Schottky diodes are named after their inventor, Dr. Schottky. The full name is: Schottky RecTIfier Diode (abbreviated as SR), also called: Schottky barrier diode, or SBD.   Schottky diode is a low-power, ultra-high-speed semiconductor device. The most notable feature is its extremely short reverse recovery time (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, protection diodes, and also useful as rectifier diodes and small-signal detector diodes in circuits such as microwave communications. It is more common in communication power supplies, inverters, etc.   A typical application of Schottky diodes is in the switching circuit of a bipolar transistor BJT. By connecting a Shockley diode to the BJT to clamp, the transistor is actually close to the off state when the transistor is on, thereby improving the transistor’s performance. Switching speed. This method is a technique used in the TTL internal circuits of typical digital ICs such as 74LS, 74ALS, and 74AS.   The biggest feature of Schottky diodes is that the forward voltage drop VF is relatively small. In the case of the same current, its forward voltage drop is much smaller. In addition, its recovery time is short. It also has some shortcomings: the withstand voltage is relatively low, and the leakage current is slightly larger. It must be fully considered when selecting. II. How does Schottky Diode Work? Schottky diodes are metal-semiconductor devices made of precious metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barrier formed on the contact surface of the two has rectification characteristics.   Because there are a large number of electrons in N-type semiconductors, and there are only a small amount of free electrons in noble metals, electrons diffuse from the high concentration of B to the low concentration of A. Obviously, there are no holes in metal A, and there is no diffusion movement of holes from A to B.   As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the electrical neutrality of the surface is destroyed, so a potential barrier is formed, and the direction of the electric field is B→A. But under the action of this electric field, the electrons in A will also produce a drifting movement from A→B, thereby weakening the electric field formed by the diffusion movement.   When a space charge region with a certain width is established, the drifting movement of electrons caused by the electric field and the diffusion movement of electrons caused by different concentrations reach a relative balance, forming a Schottky barrier.   The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor, and an N-epitaxial layer with arsenic as a dopant is formed on it. The anode uses materials such as molybdenum or aluminum to make a barrier layer. Use silicon dioxide (SiO2) to eliminate the electric field in the edge area and improve the withstand voltage of the tube.   The N-type substrate has a small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate, and its function is to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.   When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; on the contrary, if When reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.   In summary, the structure principle of Schottky rectifier is very different from PN junction rectifier. The PN junction rectifier is usually called the junction rectifier, and the metal-semi-conductor rectifier is called the Schottky rectifier.   Aluminum-silicon Schottky diodes manufactured by the silicon plane process have also come out, which not only saves precious metals, but also Significantly reduce costs and improve the consistency of parameters. III. The Structure of Schottky Diode The structure and materials of the new high-voltage SBD are different from the traditional SBD. Traditional SBD is formed by contacting metal and semiconductor. The metal material can be aluminum, gold, molybdenum, nickel, titanium, etc., and the semiconductor is usually silicon (Si) or gallium arsenide (GaAs).   Since electrons have higher mobility than holes, in order to obtain good frequency characteristics, N-type semiconductor materials are selected as the substrate. In order to reduce the junction capacitance of the SBD and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N-thin layer is usually epitaxially on the N+ substrate.   CP is the parallel capacitance of the shell and tube, LS is the lead inductance, RS is the series resistance including the semiconductor body resistance and lead resistance, and Cj and Rj are the junction capacitance and junction resistance (both are functions of bias current and bias voltage), respectively.   As we all know, there are a large number of conductive electrons inside a metal conductor. When the metal is in contact with the semiconductor (the distance between the two is only an order of magnitude of the atom), the Fermi level of the metal is lower than the Fermi level of the semiconductor. At the sub-energy level corresponding to the conduction band of the semiconductor inside the metal, the electron density is less than that of the conduction band of the semiconductor.   Therefore, after the two contact, electrons will diffuse from the semiconductor to the metal, so that the metal is negatively charged and the semiconductor is positively charged. Since metal is an ideal conductor, negative charges are only distributed in a thin layer with the size of an atom on the surface.   For N-type semiconductors, the donor impurity atoms that have lost electrons become positive ions, which are distributed in a larger thickness. As a result of the diffusion and movement of electrons from the semiconductor to the metal, a space charge zone, self-built electric field and potential barrier are formed, and the depletion layer is only on the side of the N-type semiconductor (all the barrier zone falls on the semiconductor side).   The direction of the self-built electric field in the barrier zone points from the N-type region to the metal. With the increase of the thermionic self-built field, the drift current opposite to the diffusion current direction increases, and finally a dynamic equilibrium is reached, forming a contact potential between the metal and the semiconductor Barrier, this is the Schottky barrier.   When the applied voltage is zero, the diffusion current of electrons is equal to the reverse drift current, achieving dynamic equilibrium. When a forward bias is applied (that is, a positive voltage is applied to a metal and a negative voltage is applied to a semiconductor), the self-built field is weakened and the barrier on the semiconductor side is lowered, thus forming a positive current from the metal to the semiconductor.   When a reverse bias is applied, the self-built field increases, and the barrier height increases, forming a smaller reverse current from the semiconductor to the metal. Therefore, the SBD, like the PN junction diode, is a non-linear device with unidirectional conductivity. IV. How to Test Schottky Diode? Here we show you three testing method for three different diodes. 1. Detect low-power crystal diodes   A. Discrimination of positive and negative electrodes   (1) Observe the symbol mark on the housing. Usually the diode is marked with the symbol of the diode on the housing of the diode, one end with a triangular arrow is the positive electrode, and the other end is the negative electrode.   (2) Observe the color dots on the shell. The case of point contact diodes is usually marked with polar color points (white or red). Generally, the end marked with a colored dot is the positive electrode. Other diodes are marked with a color ring, and the end with the color ring is the negative electrode.   (3) Based on a measurement with a smaller resistance value, the end connected to the black test lead is the positive electrode, and the end connected to the red test lead is the negative electrode.   B. Detect the highest working frequency fM. The operating frequency of crystal diodes can be found in the relevant characteristic table. In practice, they are often distinguished by observing the contact wires inside the diode.    For example, point contact diodes are high-frequency tubes, and surface contact diodes are mostly low-frequency tubes. In addition, you can also use the multimeter R×1k block to test, generally the forward resistance is less than 1k high frequency tube.   C. Detect the highest reverse breakdown voltage VRM. For alternating current, because of constant changes, the highest reverse working voltage is also the peak alternating current voltage that the diode bears.   It should be pointed out that the highest reverse working voltage is not the breakdown voltage of the diode. Under normal circumstances, the breakdown voltage of the diode is much higher than the maximum reverse working voltage (about twice as high).   2. Detection of high frequency varistor diodes   A. identification diode positive and negative   The difference in appearance between high-frequency varistor diodes and ordinary diodes is that their color code is different. The color code of ordinary diodes is generally black, while the color code of high-frequency varistor diodes is light. Its polarity law is similar to that of ordinary diodes, that is, the end with the green ring is the cathode, and the end with the green ring is the anode.   B. Measure the forward and reverse resistance to judge whether it is good or bad   The specific method is the same as the method of measuring the forward and reverse resistance of ordinary diodes. When using a 500-type multimeter to measure the R×1k gear, the forward resistance of a normal high-frequency varistor diode is 5k～55k, and the reverse resistance is infinity.   3. Transient voltage suppression diode (TVS) detection   Use a multimeter to measure the quality of the tube. For a unipolar TVS, according to the method of measuring ordinary diodes, the forward and reverse resistance can be measured. Generally, the forward resistance is about 4kΩ, and the reverse resistance is infinite.   For the two-way polar TVS, the resistance between the two pins should be infinite when the red and black test leads are arbitrarily exchanged. Otherwise, the tube has poor performance or has been damaged. V. Pros and Cons of Schottky Diode Pros:  Schottky diodes have the advantages of high switching frequency and reduced forward voltage, but their reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range.   Like in the switching power supply (SMPS) and power factor correction (PFC) circuit, the freewheeling diode of the power switch device, the high frequency rectifier diode of 100V or more used in the transformer secondary, the 600V～1.2kV high speed diode in the RCD snubber circuit, and For PFC boosting 600V diodes, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used.   The reverse recovery time Trr of UFRD is also above 20ns, which cannot meet the needs of 1MHz～3MHz SMPS in fields such as space stations. Even for SMPS with hard switching of 100kHz, due to the large conduction loss and switching loss of UFRD, the case temperature is very high, and a larger heat sink is required, which increases the size and weight of SMPS, which does not meet the requirements of miniaturization and lightness. Development trend.   Therefore, the development of high-voltage SBDs above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made breakthrough progress. High-voltage SBDs of 150V and 200V have been put on the market, and SBDs with more than 1kV made of new materials have also been successfully developed, thus injecting new vitality and vitality into their applications.   Cons:  The biggest disadvantage of Schottky diodes is their low reverse bias voltage and large reverse leakage current. For example, Schottky diodes using silicon and metal as materials have the highest reverse bias voltage rating. To 50V, and the reverse leakage current value is a positive temperature characteristic, it is easy to increase rapidly as the temperature rises, and it is necessary to pay attention to the hidden concern of thermal runaway in practical design.   In order to avoid the above-mentioned problems, the reverse bias voltage of the Schottky diode in actual use will be much smaller than its rated value. However, the technology of Schottky diodes has also progressed, and its reverse bias voltage rating can reach up to 200V. VI. Where to Use Schottky Diode? The structure and characteristics of SBD make it suitable for high-frequency rectification in low-voltage and high-current output occasions. It is used for detection and mixing at very high frequencies (such as X-band, C-band, S-band and Ku-band). Used as a clamp in high-speed logic circuits. SBD is often used in ICs. SBD*TTL integrated circuits have long become the mainstream of TTL circuits and are widely used in high-speed computers.   In addition to the characteristic parameters of ordinary PN junction diodes, SBD electrical parameters used for detection and mixing also include intermediate frequency impedance (referring to the impedance presented by the SBD to the specified intermediate frequency when the rated local oscillator power is applied, generally between 200Ω and 600Ω) , Voltage standing wave ratio (generally ≤ 2) and noise figure, etc. VII. How to Use Schottky Diode Correctly? Schottky diodes are widely used in circuits such as switching power supplies, frequency converters, and drivers. In different applications, different factors need to be considered, and different devices have different performances. Therefore, when selecting Schottky diodes, the following key parameters need to be considered comprehensively.   1. The conduction voltage drop VFVF is the voltage drop across the diode when the diode is forward-conducting. When the current through the diode is larger, the VF is larger; when the diode temperature is higher, the VF is smaller.   2. The reverse saturation leakage current IRIR refers to the current that flows through the diode when the reverse voltage is added to the two ends of the diode. The reverse leakage current of the Schottky diode is relatively large. The choice of Schottky diode is to choose a diode with a smaller IR as much as possible.   3. The rated current IF refers to the average current value calculated according to the allowable temperature rise during long-term operation of the diode.   4. The maximum surge current IFSM allows excessive forward current to flow. It is not a normal current, but an instantaneous current, which is quite large.   5. Even if the maximum reverse peak voltage VRM does not have reverse current, as long as the reverse voltage is continuously increased, the diode will be damaged sooner or later.   This reverse voltage that can be applied is not an instantaneous voltage, but a forward and reverse voltage repeatedly applied. Because the AC voltage is added to the rectifier, its maximum value is a specified important factor.   The maximum reverse peak voltage VRM refers to the maximum reverse voltage that can be applied to avoid breakdown. Currently Schottky's highest VRM value is 150V. FAQ 1. What is Schottky diode used for? Schottky diodes are used for their low turn-on voltage, fast recovery time and low-loss energy at higher frequencies. These characteristics make Schottky diodes capable of rectifying a current by facilitating a quick transition from conducting to blocking state. 2. What is the difference between Schottky diode and normal diode? In the normal rectifier grade PN junction diode, the junction is formed between P type semiconductor to N type semiconductor. Whereas in Schottky diode the junction is in between N type semiconductor to Metal plate. The schottky barrier diode has electrons as majority carriers on both sides of the junction. 3. How does Schottky diode work? In a Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, thus creating a Schottky barrier. The N-type semiconductor acts as the cathode and the metal side acts as the anode of the diode. This Schottky barrier results in both a low forward voltage drop and very fast switching. 4. What are the two important features of a Schottky diode? We have seen here that the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias. 5. What is Schottky diode made of? Schottky diodes made from palladium silicide (PdSi)[clarification needed] are excellent due to their lower forward voltage (which has to be lower than the forward voltage of the base-collector junction). 6. Why Schottky is called hot carrier diode? When a Schottky diode is in unbiased condition, the electrons lying on the semiconductor side have a very low energy level when compared to the electrons present in the metal.Thus, the electrons cannot flow through the junction barrier which is called the Schottky barrier. If the diode is forward biased, electrons present in the N-side get sufficient energy to cross the junction barrier and enters the metal.These electrons enter into the metal with tremendous energy. Consequently, these electrons are known as hot carriers. Thus the diode is called a hot-carrier diode. 7. What is Schottky barrier rectifier? The Schottky diode or Schottky Barrier Rectifier is named after the German physicist “Walter H. Schottky”, is a semiconductor diode designed with a metal by the semiconductor junction. It has a low-forward voltage drop and a very rapid switching act. ... Actually, it is one of the oldest semiconductor devices in reality. 8. What is meant by Schottky effect? Schottky effect, increase in the discharge of electrons from the surface of a heated material by application of an electric field that reduces the value of the energy required for electron emission. ... The effect is named after its discoverer, the German physicist Walter Schottky. 9. Why Schottky barrier is formed? When a metal is put in direct contact with a semiconductor, a so called Schottky barrier can be formed, leading to a rectifying behavior of the electrical contact. 10. What is the barrier potential of Schottky diode? The forward voltage drop ranges from 0.3 volts to 0.5 volts. The barrier of forward voltage drop is made of silicon. The forward voltage drop is proportional to the doping concentration of N type semiconductor. Due to high concentration of current carriers, the V-I characteristic of Schottky diode is steeper.

IntroductionA p-n junction is an interface or a boundary between n-type and p-type semiconductor materials, inside a semiconductor. One of the crucial keys to solid state electronics is the nature of the P-N junction. For example, a PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. And the p-side or the positive side of the semiconductor has an excess of holes and the n-side or the negative side has an excess of electrons. Why pn junction exists? and How does it work? What is p-n junction diode?PN Junction IntroductionCatalogIntroductionIntroductionⅠ PN Junction Basic1.1 PN Semiconductor1.2 PN Junction ReviewⅡ PN Junction Characteristic2.1 Unidirectional Conductivity2.2 Reverse Breakdown2.3 Volt-Ampere Characteristic2.4 Capacitance CharacteristicⅢ Typical Example: Transistor PN JunctionⅠ PN Junction Basic1.1 PN SemiconductorN-type SemiconductorIn silicon crystal (or germanium crystal) doped with a small amount of impurity phosphorus element (or antimony element), since semiconductor atoms (such as silicon atoms) are replaced by impurity atoms, among the five outer electrons in the outer layer of phosphorus atoms four of them form covalent bonds with the surrounding atoms, and the extra electron is almost unbound and becomes a free electron more easily. Therefore, the N-type semiconductor has become a semiconductor with a higher concentration of electrons, and its conductivity is mainly due to the conduction of free electrons.P-type SemiconductorIn silicon crystal (or germanium crystal) doped with a small amount of impurity boron element (or indium element), since semiconductor atoms (such as silicon atoms) are replaced by impurity atoms, the three outer electrons in the outer layer of boron atoms and a semiconductor atom form a covalent bond, at this time, a "hole" is generated. This hole may attract bound electrons to "fill", making the boron atom a negatively charged ion. In this way, this type of semiconductor has a higher concentration of "holes" ("corresponding to" positive charges) and becomes a substance capable of conducting electricity.1.2 PN Junction ReviewP-N junction is formed by joining n-type and p-type semiconductor materials, which is a two terminal device that allows electric current in one direction and blocks electric current in another direction.Figure 1. How is PN Junction FormedOn a silicon wafer, different doping processes are used to form an N-type semiconductor on one side and a P-type semiconductor on the other side. We call the area near the interface of the two semiconductors a PN junction.After the P-type semiconductor and the N-type semiconductor are combined, since the free electrons in the N-type region are more and the holes are less, the concentration difference between electrons and holes appears at their junction. Due to the difference in the concentration of free electrons and holes, some electrons will diffuse from the N-type region to the P-type region, and some holes will diffuse from the P-type region to the N-type region. As a result of their diffusion, the P region loses holes, leaving negatively charged impurity ions, and the N region loses electrons, leaving positively charged impurity ions. The ions in the semiconductor cannot move arbitrarily in an open circuit, so they do not participate in conduction. These immovable charged particles form a space charge zone near the interface between the P and N zones. The thickness of the space charge zone is related to the concentration of dopants.After the space charge region is formed, due to the interaction between the positive and negative charges, an internal electric field is formed in the space charge region, the direction of which is from the positively charged N region to the negatively charged P region. Obviously, the direction of this electric field is opposite to the direction of carrier diffusion, which used to prevent diffusion.On the other hand, this electric field will cause the minority carrier holes in the N region to drift to the P region, and the minority carrier electrons in the P region to drift to the N region. The direction of the drift movement is just opposite to the diffusion movement. The holes drifting from the N region to the P region supplement the holes lost in the P region on the original interface, and the electrons drifting from the P region to the N region supplement the electrons lost in the N region on the original interface, which makes the electric charge is reduced and the internal electric field is weakened. Therefore, the result of drift motion is to narrow the space charge region and strengthen the diffusion motion.Finally, the diffusion of multiple carriers and the drift of minority carriers reach a dynamic balance. On both sides of the junction surface of the P-type semiconductor and the N-type semiconductor, a thin ion layer is left. The charge area formed by this thin ion layer is called a PN junction. The direction of the internal electric field of the PN junction points from the N to the P. It is also called the depletion layer, because lack of electrons.Figure 2. PN Junction Depletion RegionⅡ PN Junction Characteristic2.1 Unidirectional Conductivity(1) The PN junction is turned on when the forward voltage is applied.If the positive pole of the power supply is connected to the P area and the negative pole is connected to the N area, a part of the applied forward voltage is in the PN junction area, at this time, the PN junction is in a forward bias. The current flows from the P to the N, and the holes and electrons move to the interface, which narrows the space charge area. In addition, the current can pass smoothly. Its direction is opposite to the direction of the electric field in the PN junction, which weakens the internal electric field. As a result, the resistance of the internal electric field to the diffusion movement of the multitons weakens, and the diffusion current increases. The diffusion current is much larger than the drift current, and the influence of the drift current can be ignored, and the PN junction is in low resistance.(2) PN junction is cut off when reverse voltage is applied.If the positive pole of the power supply is connected to the N zone, the negative pole is connected to the P zone, and a part of the applied reverse voltage applies in the PN junction zone, and it is in reverse bias. Then the holes and electrons move away from the interface, which widens the space charge area, and the current cannot flow. The direction is the same as the direction of the electric field in the PN junction, which strengthens the internal electric field. The resistance of the internal electric field to the multiton diffusion movement is enhanced, and the diffusion current is greatly reduced. At this time, the drift current formed by the minority carriers in the PN junction region under the action of the internal electric field is greater than the diffusion current. The diffusion current can be ignored, and the PN junction exhibits high resistance.2.2 Reverse BreakdownWhen a reverse voltage is applied to the PN junction, the space charge region becomes wider and the electric field in the region strengthens. When the reverse voltage increases to a certain level, the reverse current will suddenly increase. If the external circuit cannot limit the current, the current will be so large that it will burn the PN junction. At this time, it is called the breakdown voltage. There are two basic breakdown ways, namely tunnel breakdown (also called Zener breakdown) and avalanche breakdown. The former has a breakdown voltage of less than 6V and has a negative temperature coefficient, and the latter has a breakdown voltage of greater than 6V and a positive temperature coefficient.2.3 Volt-Ampere CharacteristicThe volt-ampere characteristics of the PN junction are shown in the Figure 3, which visually shows the unidirectional conductivity.Figure 3. Volt-Ampere Curve of the PN JunctionThe volt-ampere characteristic shows by Where iD is the current passing through the PN junction, VD is the applied voltage at both ends of the PN junction, and VT is the voltage equivalent of temperature.2.4 Capacitance CharacteristicWhen a reverse voltage is applied to the PN junction, the positive and negative charges in the space charge region constitute a capacitive device. Its capacitance changes with the applied voltage, mainly including barrier capacitance (CB) and diffusion capacitance (CD). Both of them are non-linear capacitors. Ⅲ Typical Example: Transistor PN JunctionTransistors are one of the basic building blocks of modern electronics. In the diode tutorials we saw that simple diodes are made up from two pieces of semiconductor material to form a simple pn-junction. While the transistor is a three terminal solid state device which is formed by connecting two diodes back to back. Hence it has got two PN junctions.Transistor NPN-Type and PNP-Type JunctionsTransistor Working StateThe transistor works like an electronic switch. It can turn a current ON and OFF. The basic idea behind a transistor is that it lets you control the flow of current through one channel by varying the intensity of a much smaller current that's flowing through a second channel.1) Cut-off State (C): The base current is zero.2) Amplified State (A): The transmitter junction is forward biased (that is, the voltage direction is P->N), and the collector junction is reverse biased.3) Saturation State (S): Both the emitter junction and the collector junction are forward biased.Working StateNPN-Type TransistorPNP-Type TransistorVb<Ve (C)Vc>Vb>Ve (A)Vb>Ve Vb>Vc (S)Vb>Ve (C)Vc<Vb<Ve (A)Vb<Ve Vb<Vc (S)In Figure (a), when there is no voltage input at b of the NPN transistor, no current flows between c and e, and the triode is in the cut-off state.In Figure (b), when a positive voltage is input to b of the NPN transistor, the negative electrons in the N region of e are attracted by the positrons of P region in b. Due to the effect of the power plant, and they rush (diffuse) to the base region, however, only part of the negative electrons collide with the positive electrons (recombination) to generate the base current, and the other part of the negative electrons gather near the collector junction. The negative electrons gathered in the collector junction pass through (drift) the collector junction due to the action of the electric field. After reaching the collector area, it collides with the positrons gathered in c (N-type semiconductor terminal) to generate a collector current.It can be seen from this that the greater the base current, the greater the collector current. That is, when a small current is input to the collector, a large current can be obtained by the collector, and now the transistor is in an amplified state.It should be noted that when the base current reaches a certain level, the collector current no longer rises. At this time, the transistor loses its current amplification effect, and the voltage between the collector and the emitter is very small. The collector and emitter are equivalent to the on-state of the switch. At this moment, the transistor is in a saturated state.The working principle of the PNP transistor is the same as that of the NPN transistor, except that the direction of the bias voltage and the current are opposite, and the roles of electrons and holes are reversed. The PNP transistor uses Veb to control the positrons incident on the collector area from the emitter area through the base area, while the NPN transistor uses Vbe to control the negative electrons that enter the collector area from the emitter area through the base area.In addition, in a low-power design, the transistor control circuit will have a certain impact on the circuit. No matter it is NPN or PNP, there will be leakage current in the PN junction of the transistor. When the I/O controls the base voltage, in order to stabilize the base voltage, a pull-down resistor is generally added to the base of the NPN switch circuit. In the design of the PNP switch circuit, a pull-down resistor is added to the base. The pull-up and pull-down resistors are selected according to the control chip, transistor and circuit voltage. Frequently Asked Questions about PN Junctions Formed1. What is PN junction and how it is formed?P-n junctions are formed by joining n-type and p-type semiconductor materials, as shown below. ... However, in a p-n junction, when the electrons and holes move to the other side of the junction, they leave behind exposed charges on dopant atom sites, which are fixed in the crystal lattice and are unable to move. 2. What is p-type and n-type?In silicon doping, there are two types of impurities: n-type and p-type. In n-type doping, arsenic or phosphorus is added in small quantities to the silicon. ... In p-type doping, boron or gallium is used as the dopant. These elements each have three electrons in their outer orbitals. 3. What is a PN junction diode?A PN Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. ... By applying a negative voltage (reverse bias) results in the free charges being pulled away from the junction resulting in the depletion layer width being increased. 4. What happens in a PN junction?A forward-biased PN junction conducts a current once the barrier voltage is overcome. The external applied potential forces majority carriers toward the junction where recombination takes place, allowing current flow. A reverse-biased PN junction conducts almost no current. 5. What is a PN junction used for?A p-n junction diode is a two terminal device that allows electric current in one direction and blocks electric current in another direction. In forward bias condition, the diode allows electric current whereas in reverse bias condition, the diode does not allow electric current.

IntroductionIn electronics, transient voltage suppressor (TVS) diodes are components that protect sensitive circuitry from being damaged due to high voltage transients. Because tvs diodes are constructed with large cross sectional area junctions for absorbing high transient currents. The primary source of high voltage transients are electrostatic discharge, electrical fast transient, and surge events. This notes will tell you how does a tvs diode work to prevent a circuit malfunction and protect devices.CatalogIntroductionⅠ Transient Voltage Suppressors (TVS)1.1 What Transient Means??1.2 What Causes a Circuit to Be Transient?1.3 What Does a TVS Do?1.4 What Can Be A Transient Voltage Suppressor?Ⅱ Transient Voltage Suppression Diode2.1 TVS Diode Overview2.2 How To Choose A TVS Diode?Ⅲ How Do You Use TVS Diode for Circuit Protection3.1 TVS Diode in Circuits3.2 Major TVS Diode ParametersⅣ ConclusionⅠ Transient Voltage Suppressors (TVS)1.1 What Transient Means?Transients are spikes of short duration in voltage or current that can in several ways damage a circuit. Some transients only occur once, and some of them may be repetitive. These transients vary from a few millivolts to thousands of volts and can last for hundreds of milliseconds to nanoseconds. Due to inductive load switching or defective contacts in switches and connectors, transients may be produced internally. It can be produced externally because of lightning strikes or inductive switching.1.2 What Causes Transient Voltage?Transient voltages are caused by the sudden release of stored energy due to incidents such as lightning strikes, unfiltered electrical equipment, contact bounce, arcing, capacitor bank or generators being switched ON and OFF. Transient voltages differ from swells by being larger in magnitude and shorter in duration. Transient voltages typically last from less than a microsecond to several milliseconds. Transient voltages are generally classified into two different types depending on where they occur on a power system: normal mode or common mode.1.3 What Does a TVS Do?Transient voltage suppressors or TVS are devices of protection used to save the circuits from this unexpected voltage or current spike. Positioning these TVS devices in parallel with the circuit is the primary way to protect a circuit from overvoltage.1.4 What Can Be A Transient Voltage Suppressor?Metal oxide varistor, TVS diode, Zener diode or bypass capacitor are several types of TVS devices that can be used for transient voltage suppression diodes.Transient Voltage Suppressors can be divided into two types, clamping and crowbar. Clamping devices restrict the voltage to a level which is fixed. They consume the excess energy of the overvoltage event in doing so. An instance of clamping devices is TVS diodes.On the other hand, once activated, Crowbar devices effectively shorten the protected line, redirecting the excess energy away from the protected circuit. As you can see in the graph below, when a trigger voltage (spike) is detected, the crowbar device shorts the circuits such that the line voltage is decreased, then the line voltage rises again to a stable state for regular circuit operation after some time as the crowbar device delays the circuit.Transient Voltage Suppression Diode SymbolⅡ Transient Voltage Suppression Diode2.1 TVS Diode OverviewThe transient voltage suppression diode ((ESD protection diode)) is a solid-state PN-Junction diode explicitly designed to remove the sudden or momentary effects of overvoltage on sensitive semiconductors and circuits. TVS diode is a clamping system, so it absorbs the excess energy of the overvoltage event if the induced voltage reaches the avalanche breakdown voltage, and then automatically resets after overvoltage situation. Although it is true that standard diodes and Zener diodes can also be used for overvoltage/transient safety, since standard and Zener diodes are designed for rectification and voltage control, they are not as robust as transient voltage suppressor diodes.How Does Transient Voltage Suppressor Diode Work?2.2 How To Choose A TVS Diode?When selecting a suitable transient suppressor, it is necessary what types tvs diode have? Like every other avalanche diode, a unidirectional transient voltage suppressor diode acts in the forward direction as a rectifier in a circuit, and this unidirectional diode is made to withstand very high peak currents. The unidirectional TVS diode symbol is seen in the picture below, and it's almost like a Zener diode.On the other hand, two mutually opposing avalanche diodes connected in series with each other can represent a bidirectional transient-voltage-suppression diode. In parallel with the system or circuit to be secured, these diodes are connected. These diodes are produced as a single element, unlike the symbol. The Bidirectional TVS Diode symbol is shown in the picture below.Introduction to Transient Voltage Suppressors (TVS) CharacteristicBefore take a tvs diode in circuit, it is critical to specify the peak impulse capability for a given transient waveform. In most diodes, the peak pulse capability will be rated either 8/20µs or 10/1000µs impulse waveform. It is possible to classify Transient Voltage Suppressor Diodes into two groups. One of them is unidirectional, and the other is bidirectional.Ⅲ How Do You Use TVS Diode for Circuit Protection3.1 TVS Diode in CircuitsIn parallel with the system or circuit to be secured, TVS diodes are attached. The TVS system is specifically designed to break down at a particular voltage level and, without sustaining damage, conduct large quantities of current.The TVS diode appears as an open circuit under normal voltage conditions, but a low leakage current is present. The TVS diode junction avalanches when the usual voltage reaches a certain amount and overvoltage is redirected from the safe circuit as a result and shunted through the TVS diode. When the overvoltage goes down, the system automatically resets.In addition, the VI characteristic curve of the tvs diode is similar to that of a Zener diode, TVS diodes are specifically designed, characterized, and tested for transient voltage suppression. By contrast, zener diodes are designed and specified for voltage regulation.3.2 Major TVS Diode ParametersMany types of TVS diodes, equipped for a particular application, are on the market. When selecting a TVS diode to protect an external interface, there are a couple of key parameters you want to pay special attention to. Here is the following parameters in the datasheet to help you find a right TVS diode.Reverse Stand-Off Voltage (VR)The highest voltage that can be applied to the protector without the system actually being triggered is the reverse stand-off voltage. The VR of the system should be equal to, or greater than, the peak operating voltage of the safe circuit. This is to ensure that the regular circuit operation or signal voltage is not clipped by the safety system.Breakdown voltage (VBR)The voltage at which the diode can begin to protect and conduct current is the breakdown voltage. The VBR is usually defined at 1mA.Clamping Voltage (VC)The clamping voltage is the maximum voltage that will be exposed to the safe circuit during the event of the test waveform. The clamping voltage for a 1A or 2A waveform that has an 8μS rise time is given on most datasheets.Peak Pulse Current (IPP)The highest current which the safety system can withstand is the peak pulse current.Ⅳ ConclusionThe TVS diode is commonly used in low-energy circuits and systems for diversion/clamping, and in circuits for ESD safety. Because one advantage of using external TVS diodes is that they typically provide level four IEC ESD protection. Under normal operating conditions, the TVS diode presents a high impedance to the protected circuit. Ideally, the device appears as an open circuit, although a small amout of leakage current is present. TVS diode applications can be found in data and signal lines, memory for microprocessors and MOS, power lines for AC/DC, and telecommunication equipment. Frequently Asked Questions about TVS Diodes1. What is Transient-voltage-suppression diode?A transient-voltage-suppression (TVS) diode, also transil or thyrector, is an electronic component used to protect electronics from voltage spikes. In other words, transient voltage suppressor diodes are very popular devices used to instantaneously clamp transient voltages (e.g., ESD events) to safe levels. 2. How does a transient voltage suppressor diode work?Transient Voltage Suppressor Diode is a clamping device, so whenever the induced voltage exceeds the avalanche breakdown voltage, it absorbs the excess energy of the overvoltage event, and then it automatically resets after overvoltage condition. 3. What does a transient voltage suppressor do?Transient Voltage Suppressors (TVS) are devices used to protect vulnerable circuits from electrical overstress such as that caused by electrostatic discharge, inductive load switching and induced lightning. 4. What does a suppression diode do?A transient-voltage-suppression (TVS) diode, also transil or thyrector, is an electronic component used to protect electronics from voltage spikes induced on connected wires.

IntroductionOver voltage protection is necessary to prevent damage as a result of electrical transients. It is a power supply feature which shuts down the supply, or clamps the output, when the voltage exceeds a preset level. Most power supplies use an over-voltage protection circuit to prevent damage to the electronic components. They offer some form of overvoltage-protect (OVP) circuit to detect and then quickly pull down the overvoltage. When the voltage exceed the rated maximum breakdown voltage, do you know using Zener diode to make overvoltage protection circuit? Here introduces the Zener diode overvoltage protection circuit, which is the most common way.CatalogIntroductionⅠ Over Voltage BackgroundⅡ Zener Diode Input Protection BasicsⅢ Simple Overvoltage Protection Circuit Using Zener DiodeⅣ How Do You Choose a Zener Diode to Protect a Circuit?Ⅴ Zener Overvoltage Protection OverviewⅠ Over Voltage BackgroundEvery circuit design operates at various voltage levels, with 3.3V, 5V, and 12V being the most common voltage levels for a digital circuit. But every design is special, and having more than one operating voltage is also normal for a circuit. For example, a standard computer SMPS system will work at six different levels of voltage, namely ±3.3V, ±5V, and ±12V. In these cases, if a low-power device is operated by a high voltage, the component will be permanently impaired if various voltage levels are used to power different types of components. Therefore, to avoid over-voltage harm, the designer should always concentrate on implementing an over-voltage security circuit in his designs.There will be three different voltage ratings for any part or circuit, namely the minimum operating voltage, the suggested or normal operating voltage and the maximum operating voltage. For any circuits or parts, any value over the maximum operating voltage can be fatal. Using a Zener diode over voltage protection circuit is a very common and cost-effective solution. Ⅱ Zener Diode Input Protection BasicsIn order to protect the circuit from overvoltage conditions, Zener diodes are often the first option. A Zener diode follows the same diode theory, which blocks the current flow in the reverse direction. However, there is a drawback that the Zener diode blocks the flow of current in the reverse direction only for a restricted voltage defined by the voltage rating of the Zener diode. A 5.1V Zener diode blocks current to flow in the opposite direction up to 5.1V If the voltage is greater than 5.1V through the Zener diode, it allows the current to pass through it. This Zener diode function makes it an excellent over-voltage security component.Over-Voltage Protection Circuit using Zener DiodesⅢ Simple Overvoltage Protection Circuit Using Zener DiodeConsider a circuit, where need microcontroller over-voltage protection. Anything that has a maximum rating of 5V across the microcontroller IO pins. So voltage more than 5V will damage the microcontroller.Figure 1. Overvoltage Protection for MicrocontrollerThe diode used in the circuit above is a Zener diode of 5.1V. During an over-voltage case, it will work perfectly. It can transfer the current and regulate the voltage up to 5.1V if the voltage is more than 5.1V. In practice, however, it will behave as a regular diode and block less than 5.1V The image below is a simulation of the spice circuit of Zener diode protection. For the full simulation description, you can make it based on your need.Figure 2. Simulating Overvoltage Protection CircuitThere is an input voltage in the schematic above, which is dc supply. The R1 and D1 are two components that protect the output from protection from over-voltage. The D1, 1N4099, in this case, is a Zener diode. When the V1 reaches 6.8V, the output will be protected. The output would remain at a maximum of 6.8V as a reference voltage of 1N4099.Let's see how the above circuit works as the protection circuit of the Zener diode input and protects the output from more than 6.8V voltage.Using pspice cadence, the above circuit is simulated. The output remains constant at 5.99V at the 6V input voltage across the V1 (Which is 6.0V).The input voltage in the above simulation is 6.8V. The performance, therefore, is 6.78V, which is similar to 6.8V. Let's further raise the input voltage and create a situation of overvoltage.Now, 7.5V, which is more than 6.8V, is the input voltage. The performance is now now at 6.88V. This is how a Zener diode is successful in saving the connected circuit from a situation of overvoltage, even when the voltage returns to less than 6.8V, as shown in the previous stage, the circuit will operate normally again. In other words, a Zener diode does not get fried even during an overvoltage state, unlike a fuse.To pick different overvoltage margins in the above circuit, any other Zener diodes with different values such as 3.3V, 5.1V, 9.1V, 10.2V can be used. Ⅳ How Do You Choose a Zener Diode to Protect a Circuit?The next critical part is choosing the value of the Zener Diode. The points below will assist you in selecting the correct Zener Diode value and part number.1) Choose the voltage of the Zener diode first. It is the voltage value that will serve as a close circuit for the Zener diode and protect the load from overvoltage. The Zener voltage is 6.8V in Pspice, for the above example.There will be some cases where there is no usable targeted Zener diode voltage. In such instances, it is possible to choose a near value of the Zener diode. For example, for overvoltage security up to 7V, a near value is a 6.8V Zener diode.2) Calculate the load current that is linked across the circuit of overvoltage safety. This is 50mA for our example discussed above. Other than the load current, biasing current is required by Zener diodes. Therefore, the total current, plus the Zener diode biasing current, should be equal to the load current. For the above mentioned example, it can be total current=50mA+10mA=60mA.3) There is a power ranking for Zener diodes. Therefore, for proper heat dissipation, the correct Zener diode power rating is required. Based on the measured total current in Phase - 2, which is 60mA, the power rating can be calculated. Therefore, the power rating of the Zener diode would be equal to the voltage of the Zener diode, which connects the total current flowing through the diode.4) Calculate the value of the resistor by differentiating the voltage of the source and the general voltage. The limit which can be applied to the circuit would be the source voltage. For example, it can be 13V to maximize overvoltage that can occur or can be added as a supply voltage.The voltage drop through the resistor will then be = 13V-6.8V = 6.2V According to the law of the ohm, the resistor value will be = 6.2V / 0.060 A = 103R It is possible to choose the standard value 100R resistor.5) Zener diode typical values are 5.1V, 5.6V, 6.2V, 12V and 15V -most common; they are also have 3V, 5V, 12V, 18V, 24V.Ⅴ Zener Overvoltage Protection OverviewZener diode as a voltage regulator, it is suitable for overvoltage protection circuit. Because the easiest and simplest process to protect devices from overvoltage is overvoltage-protect circuit using Zener diodes. The voltage remains regulated in this technique and the cost of this circuit is much lower compared to other techniques.Although, surely, there are disadvantages to this sort of circuit. Power dissipation is the main downside of this type of circuit. It still dissipates heat due to the linked series resistor and results in energy wastage. Frequently Asked Questions about Zener Diode Overvoltage Protection Circuit Design1. What is overvoltage protection?Over voltage protection is a power supply feature which shuts down the supply, or clamps the output, when the voltage exceeds a preset level. Most power supplies use an over-voltage protection circuit to prevent damage to the electronic components. 2. Which is most common circuit protection device?The SPD(surge protection device) device is allied in parallel in the power supply circuit, which can be used on all stages of the power supply system. The surge protection device is the most frequently used and also well-organized kind of over-voltage protective devices. 3. What can cause overvoltage?The main causes include insulation failure, arcing ground and resonance etc. 4. How does a Zener diode regulate voltage?Zener diodes are widely used as voltage references and as shunt regulators to regulate the voltage across small circuits. When connected in parallel with a variable voltage source so that it is reverse biased, a Zener diode conducts when the voltage reaches the diode's reverse breakdown voltage.