ON Semiconductor FDB86366-F085

Brief Description: The FDB86366-F085 is an N-Channel Power MOSFET from ON Semiconductor, designed for high-power applications. It features a continuous drain current of 110A and a drain-to-source voltage of 80V.

Features:

• High-power N-Channel MOSFET
• Continuous drain current: 110A
• Drain-to-source voltage: 80V
• Drive voltage: 10V (max Rds On, min Rds On)
• Element configuration: Single
• FET type: N-Channel
• Gate charge: 112nC @ 10V
• Input capacitance: 6280pF @ 40V
• Operating temperature: -55°C to 175°C TJ
• Power dissipation: 176W TJ
• Rds On: 3.6mΩ @ 80A, 10V
• Vgs: ±20V
• Vgs(th): 4V @ 250μA

Application Grade: The FDB86366-F085 is designed for high-power applications, such as:

• Automotive power systems
• Industrial power supplies
• Power conversion and conditioning
• High-power switching

Applications:

• High-power switching and control
• Power conversion and conditioning
• Automotive power systems
• Industrial power supplies
• Renewable energy systems

This MOSFET is suitable for applications that require high power handling, high efficiency, and reliable operation in harsh environments. Its high current handling capability, low Rds On, and wide operating temperature range make it an excellent choice for a variety of high-power applications.