ON Semiconductor FDB86566-F085

Brief Description: The FDB86566-F085 is an N-Channel PowerTrench MOSFET from ON Semiconductor, designed for high-power applications. It features a continuous drain current of 110A and a drain-to-source voltage of 60V.

Features:

• N-Channel PowerTrench MOSFET
• Continuous drain current (ID): 110A
• Drain-to-source voltage (Vdss): 60V
• Drive voltage (Max Rds On, Min Rds On): 10V
• Element configuration: Single
• FET type: N-Channel
• Gate charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V
• Operating temperature: -55°C to 175°C TJ
• Power dissipation (Max): 176W TJ
• Rds On (Max) @ Id, Vgs: 2.7mΩ @ 80A, 10V
• Vgs (Max): ±20V
• Vgs(th) (Max) @ Id: 4V @ 250μA

Application Grade: The FDB86566-F085 is designed for high-power applications, such as automotive, industrial, and power supply systems.

Applications:

• High-power switching applications
• Automotive power systems
• Industrial power systems
• Power supply systems
• High-current, high-voltage applications

This MOSFET is suitable for applications that require high power, high current, and high voltage, such as:

• DC-DC converters
• Motor drives
• Power supplies
• Automotive systems
• Industrial control systems

Overall, the FDB86566-F085 is a high-performance N-Channel PowerTrench MOSFET designed for high-power applications, offering high current, high voltage, and low resistance.