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FDS8928A Effect Transistor: Datasheet, Pinout, Features [FAQ]

  • Contents

Product Overview

These dual N- and P -Channel enhancement mode power field effect transistors  are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management  and other battery powered circuits where fast switching,low in-line power loss, and resistance to transients are needed.

 

This blog will introduce FDS8928A systematically from its features, pinout to its specifications, applications, also including FDS8928A datasheet and so much more.

 

Catalog

Product Overview

FDS8928A Features

FDS8928A Pinout

Absolute Maximum Ratings

Thermal Characteristics

Electrical Characteristics

Typical Electrical Characteristics: N-Channel

FDS8928A Datasheet

Disclaimer

Life Support Policy

Product Status Definitions

FDS8928A FAQ

 

FDS8928A Features

■N-Channel 5.5 A,30V, R DS(ON)=0.030Q @ Vgs=4.5 V

RDS(ON)=0.0380 @ V&s=2.5 V.

P-Channel -4 A,-20 V, RDS(ON)=0.055 n @Vg=-4.5 V

RDS(ON)=0.072Q @Vg :=-2.5 V.

■High density cell design for extremely low R DS(ON)

■High power and current handling capability in a widely used surface mount package.

■Dual (N & P-Channel) MOSFET in surface mount package.

 

FDS8928A Pinout

The following figure is the diagram of FDS8928A pinout.

 

FDS8928A Pinout

FDS8928A Pinout

 

Absolute Maximum Ratings

Symbol

Parameter

N-Channel

P-Channel

Units

VDSS

Drain-Source Voltage

30

-20

V

VGSS

Gate-Source Voltage

8

-8

V

ID

Drain Current - Continuous (Note 1a)

- Pulsed

5.5

-4

A

 

 

20

-20

 

PD

Power Dissipation for Dual Operation

2

W

 

Power Dissipation for Single Operation (Note 1a)

(Note 1b) (Note 1c)

 

 

1.6

 

 

1

 

 

0.9

 

TJ,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

 

Thermal Characteristics

RqJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

78

°C/W

RqJC

Thermal Resistance, Junction-to-Case (Note 1)

40

°C/W

 

Electrical Characteristics

Symbol

Parameter

Conditions

Type

Min

Typ

Max

Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

N-Ch

30

 

 

V

 

 

VGS = 0 V, ID = -250 µA

P-Ch

-20

 

 

V

DBVDSS/DTJ

Breakdown Voltage Temp. Coefficient

 

I = 250 µA, Referenced to 25 oC D

N-Ch

 

32

 

mV/oC

 

 

 

I = -250 µA, Referenced to 25 oC D

P-Ch

 

-23

 

 

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

N-Ch

 

 

1

µA

 

 

VDS = -16 V, VGS = 0 V

P-Ch

 

 

-1

µA

IGSSF

Gate - Body Leakage, Forward

VGS = 8 V, VDS = 0 V

All

 

 

100

nA

IGSSR

Gate - Body Leakage, Reverse

VGS = -8 V, VDS = 0 V

All

 

 

-100

nA

ON CHARACTERISTICS

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

N-Ch

0.4

0.67

1

V

 

 

VDS = VGS, ID = -250 µA

P-Ch

-0.4

-0.6

-1

V

DVGS(th)/DTJ

Gate Threshold Voltage Temp. Coefficient

 

I = 250 µA, Referenced to 25 oC D

N-Ch

 

-3

 

mV/oC

 

 

 

I = -250 µA, Referenced to 25 oC D

P-Ch

 

4

 

 

RDS(ON)

Static Drain-Source On-Resistance

VGS = 4.5 V, ID = 5.5 A

N-Ch

 

0.025

0.03

W

 

 

VGS = 2.5 V, ID = 4.5 A

 

 

0.031

0.038

 

 

 

VGS = -4.5 V, ID = -4 A

P-Ch

 

0.043

0.055

 

 

 

VGS = -2.5 V, ID = -3.4 A

 

 

0.059

0.072

 

ID(on)

On-State Drain Current

VGS = 4.5 V, VDS= 5 V

N-Ch

20

 

 

A

 

 

VGS = -4.5 V, VDS= -5 V

P-Ch

-20

 

 

 

gFS

Forward Transconductance

VDS = 5 V, I D = 5.5 A

N-Ch

 

20

 

S

 

 

VDS = -5 V, I D = -4 A

P-Ch

 

13

 

S

SWITCHING CHARACTERISTICS

tD(on)

Turn - On Delay Time

VDS = 6 V, I D = 1 A

N-Ch

 

6

12

ns

 

 

VGS = 4.5 V , RGEN = 6 W

P-Ch

 

8

16

 

tr

Turn - On Rise Time

 

N-Ch

 

19

31

ns

 

 

 

VDS= -10 V, I D = -1 A

P-Ch

 

23

37

 

tD(off)

Turn - Off Delay Time

 

N-Ch

 

42

67

ns

 

 

VGS = -4.5 V , RGEN = 6 W

P-Ch

 

260

360

 

tf

Turn - Off Fall Time

 

N-Ch

 

13

24

ns

 

 

 

P-Ch

 

90

125

 

Qg

Total Gate Charge

VDS = 10 V, I D = 5.5 A,

N-Ch

 

19.8

28

nC

 

 

VGS = 4.5 V

P-Ch

 

20

28

 

Qgs

Gate-Source Charge

 

N-Ch

 

2

 

nC

 

 

VDS = -5 V, I D = -4 A,

P-Ch

 

2.8

 

 

Qgd

Gate-Drain Charge

VGS = -5 V

N-Ch

 

6.3

 

nC

 

 

 

P-Ch

 

3.2

 

 

 

Notes:

1.RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.

2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

 

Typical Electrical Characteristics: N-Channel

Figure 1. On-Region Characteristics

Figure 1. On-Region Characteristics.

 

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

 

Figure 3. On-Resistance Variation with Temperature.

Figure 3. On-Resistance Variation with Temperature.

 

Figure 4. On-Resistance V ariation with Gate-to-Source Voltage.

Figure 4. On-Resistance V ariation with Gate-to-Source Voltage.

 

Figure 5. Transfer Characteristics.

Figure 5. Transfer Characteristics.

 

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

 

Figure 7. Gate Charge Characteristics.

Figure 7. Gate Charge Characteristics.

 

Figure 8. Capacitance Characteristics.

Figure 8. Capacitance Characteristics.

 

Figure 9. Maximum Safe Operating Area.

Figure 9. Maximum Safe Operating Area.

 

Single Pulse Maximum Power Dissipation.

Figure 10. Single Pulse Maximum Power Dissipation.

 

FDS8928A Datasheet

You can download FDS8928A datasheet from the link given below:

FDS8928A Datasheet

 

Disclaimer

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

 

Life Support Policy

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION  .

As used herein:

1.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in  accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

 

Product Status Definitions

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product  that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

 

FDS8928A FAQ

What is a dual N/P-channel enhancement-mode MOSFET?

FDS8928A.

 

What is the FDS8928A specifically designed to do?

To minimize ON-state resistance.

 

What is the FDS8928A particularly suited for?

Notebook computer power management.

 

What is the function of field effect transistor?

A field-effect transistor (FET) is a type of transistor commonly used for weak-signal amplification (for example, for amplifying wireless signals). The device can amplify analog or digital signals. It can also switch DC or function as an oscillator.

 

Why it is called field effect transistor?

The concept of the field effect transistor is based around the concept that charge on a nearby object can attract charges within a semiconductor channel. It essentially operates using an electric field effect - hence the name.

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