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M25P80-VMP6TG TR FLASH - NOR Memory IC: Logic Diagram, Datasheet, Features [Video&FAQ]

  • Contents

Catalog

Product Overview

M25P80-VMP6TG TR Related Video Introduction

M25P80-VMP6TG TR Logic Diagram

M25P80-VMP6TG TR Pin Configuration

M25P80-VMP6TG TR Block Diagram

M25P80-VMP6TG TR Features

M25P80-VMP6TG TR Datasheet

M25P80-VMP6TG TR Specifications

M25P80-VMP6TG TR Manufacturer

Using Warning

M25P80-VMP6TG TR FAQ

 

Product Overview

The M25P80 is an 8Mb (1Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75 MHz.

 

The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. Memory can be viewed either as 4096 pages or as 1,048,576 bytes. The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command.

 

This data sheet details the functionality of the M25P80 device based on 110nm process.

 

M25P80-VMP6TG TR Video Description: NOR and NAND flash memory are the two primary kinds of non-volatile storage technologies. NOR flash has faster read times, but NAND has faster write times, which impacts how they’re used. For instance, NOR is used in low-capacity, but high reliability applications, like for scientific or medical devices. NAND is used in high memory applications that don’t require fast read times, like digital cameras. Some devices, like smartphones and tablets, use both.

 

M25P80-VMP6TG TR Logic Diagram

M25P80-VMP6TG TR Logic Diagram

Figure: M25P80-VMP6TG TR Logic Diagram

Signal Name Function Direction
C Serial clock Input
DQ0 Serial data input Input
DQ1 Serial data output Output
S# Chip select Input
W# Write protect or enhanced program supply voltage Input
HOLD# Hold Input
VCC Supply voltage
VSS Ground

 

M25P80-VMP6TG TR Pin Configuration

M25P80-VMP6TG TR Pin Configuration

Figure: M25P80-VMP6TG TR Pin Configuration

Signal Type Description
DQ1 Output Serial data: The DQ1 output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock (C).
DQ0 Input Serial data: The DQ0 input signal is used to transfer data serially into the device. It receives commands, addresses, and the data to be programmed. Values are latched on the rising edge of the serial clock (C).
C Input Clock: The C input signal provides the timing of the serial interface. Commands, ad- dresses, or data present at serial data input (DQ0) is latched on the rising edge of the serial clock (C). Data on DQ1 changes after the falling edge of C.
S# Input Chip select: When the S# input signal is HIGH, the device is deselected and DQ1 is at high impedance. Unless an internal PROGRAM, ERASE, or WRITE STATUS REGISTER cy- cle is in progress, the device will be in the standby power mode (not the deep power- down mode). Driving S# LOW enables the device, placing it in the active power mode. After power-up, a falling edge on S# is required prior to the start of any command.
HOLD# Input Hold: The HOLD# signal is used to pause any serial communications with the device without deselecting the device. During the hold condition, DQ1 is High-Z. DQ0 and C are "Don’t Care." To start the hold condition, the device must be selected, with S# driven LOW.
W#/VPP Input Write protect: The W#/VPP signal is both a control input and a power supply pin. The two functions are selected by the voltage range applied to the pin. If the W#/VPP input is kept in a low voltage range (0 V to VCC) the pin is seen as a control input. The W# input signal is used to freeze the size of the area of memory that is protected against program or erase commands as specified by the values in BP2, BP1, and BP0 bits of the Status Register. VPP acts as an additional power supply if it is in the range of VPPH, as defined in the AC Measurement Conditions table. Avoid applying VPPH to the W#/VPP pin during a BULK ERASE operation.
VCC Power Device core power supply: Source voltage.
VSS Ground Ground: Reference for the VCC supply voltage.
DNU Do not use.

 

M25P80-VMP6TG TR Block Diagram

M25P80-VMP6TG TR Block Diagram

Figure: M25P80-VMP6TG TR Block Diagram

 

M25P80-VMP6TG TR Features

  • SPI bus-compatible serial interface
  • 8Mb Flash memory
  • 75 MHz clock frequency (maximum)
  • 2.7V to 3.6V single supply voltage
  • Page program (up to 256 bytes) in 0.64ms (TYP)
  • Erase capability

– Sector erase: 512Kb in 0.6 s (TYP)

– Bulk erase: 8Mb in 8 s (TYP)

  • Write protection

– Hardware write protection: protected area size defined by nonvolatile bits BP0, BP1, BP2

  • Deep power-down: 1µA (TYP)
  • Electronic signature

JEDEC-standard 2-byte signature (2014h)

– Unique ID code (UID) and 16 bytes of common Flash interface (CFI) data

– RES command, one-byte signature (13h) for backward compatibility

  • More than 100,000 write cycles per sector
  • More than 20 years data retention
  • Automotive-grade parts available
  • Packages (RoHS-compliant)

– SO8N (MN) 150 mils

– SO8W (MW) 208 mils

– VFDFPN8 (MP) MLP8 6mm x 5mm

– UFDFPN8 (MC) MLP8 4mm x 3mm

 

M25P80-VMP6TG TR Datasheet

You can download the datasheet from the link given below:

M25P80-VMP6TG TR Datasheet

 

M25P80-VMP6TG TR Specifications

Type Description
Category Integrated Circuits (ICs)
Memory
Mfr Micron Technology Inc.
Part Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 8Mb (1M x 8)
Memory Interface SPI
Clock Frequency 75 MHz
Write Cycle Time - Word, Page 15ms, 5ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Supplier Device Package 8-VDFPN (6x5) (MLP8)
Base Product Number M25P80

 

M25P80-VMP6TG TR Manufacturer

Micron is one of the world's leading providers of advanced semiconductor solutions. Micron's DRAM and Flash components are used in today's most advanced computing, networking, and communications products, including computers, workstations, servers, cell phones, wireless devices, digital cameras, and gaming systems.

 

Using Warning

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

M25P80-VMP6TG TR FAQ

What is FLASH - NOR Memory?

NOR flash memory is one of two types of non-volatile storage technologies. Non-volatile memory doesn't require power to retain data. NOR and NAND use different logic gates -- the fundamental building block of digital circuits -- in each memory cell to map data.

 

What's the difference between NOR and NAND?

NOR and NAND flash memory are different by their architecture and purpose. NOR memory is used for storing code and execution. Allows quick random access to any location in memory array. NAND memory is used for data storage.

 

What is serial NOR Flash memory?

The industry standard Quad SPI (Serial Peripheral Interface) interface is simple to use and is supported by virtually all modern chipsets. NOR Flash is the ideal memory for code storage in embedded systems due to its fast random read performance. 

 

M25P80-VMP6TG PCB Symbol, Footprint & 3D Model

Micron M25P80-VMP6TG

Micron

Flash, 8MX1, PDSO8, 0.208 INCH, ROHS COMPLIANT, SOP-8

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