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IRFP064N MOSFET: Datasheet, Equivalents, Circuit [FAQ]

  • Contents

Product Overview

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

 

This blog will introduce IRFP064N systematically from its features, pinout to its specifications, applications, also including IRFP064N datasheet and so much more.

 

Catalog

Product Overview

IRFP064N Features

IRFP064N Pinout

IRFP064N Equivalents

IRFP064N CAD Models

IRFP064N Circuit Diagram

IRFP064N Package

IRFP064N Specification

IRFP064N Manufacturer

IRFP064N Datasheet

Using Warnings

IRFP064N FAQ

 

IRFP064N Features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated

 

IRFP064N Pinout

The following figure is the diagram of IRFP064N pinout.

VDSS = 55V

RDS(on) = 0.008Ω

ID = 110A†

 

IRFP064N Pinout

IRFP064N Pinout

 

IRFP064N Equivalents

You can replace the IRFP064N with the IRFP1405, IRFP2907, IRFP2907Z, IRFP3077, IRFP3206, IRFP3306, IRFP4110, IRFP4310Z, IRFP4368, IRFP4468, IRFP4568.

 

IRFP064N CAD Models

The followings are IRFP064N Symbol, Footprint, and 3D Model.

 

IRFP064N Symbol

IRFP064N Symbol

 

IRFP064N Footprint

IRFP064N Footprint

 

IRFP064N 3D Model

IRFP064N 3D Model

 

IRFP064N Circuit Diagram

The following is the circuit diagram of IRFP064N.

 

Switching Time Test Circuit

Switching Time Test Circuit

 

IRFP064N Package

The following diagram shows the IRFP064N package.

 

IRFP064N Package

IRFP064N Package

 

IRFP064N Specification

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 110 A
Rds On - Drain-Source Resistance: 8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 70 ns
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
Rise Time: 100 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 14 ns
Width: 5.31 mm
Unit Weight: 0.211644 oz

 

IRFP064N Manufacturer

Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products.

 

IRFP064N Datasheet

You can download IRFP064N datasheet from the link given below:

IRFP064N Datasheet

 

Using Warnings

Note: Please check their parameters and pin configuration before replacing them in your circuit.

 

IRFP064N FAQ

What is MOSFET and how it works?

MOSFET (metal-oxide semiconductor field-effect transistor, pronounced MAWS-feht ) is a special type of field-effect transistor ( FET ) that works by electronically varying the width of a channel along which charge carriers ( electron s or hole s) flow. The wider the channel, the better the device conducts.

 

What is a MOSFET used for?

MOSFET, in short, is a metal oxide semiconductor field-effect transistor used to switch or amplify voltages in circuits.

 

What is the difference between Transistor and Mosfet?

The only difference is in function. A MOSFET is a type of transistor commonly used in switching/amplifier type applications, as they are usually designed for higher power use (so called “high power” transistors are mostly MOSFET and Darlington type).

 

Which is the another name of MOSFET?

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.

 

Who invented the MOSFET?

Martin (John) M. Atalla. John Atalla is one of the inventors of the metal-oxide-semiconductor field-effect transistor (MOSFET), the most widely employed type of integrated circuit. Born in Port Said, Egypt, Atalla came to the United States for graduate studies at Purdue University.

 

IRFP064N Documents & Media

Download datasheets and manufacturer documentation for Infineon IRFP064N.
Datasheets
datasheet

IRFP064N PCB Symbol, Footprint & 3D Model

Infineon IRFP064N

Infineon

Infineon Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.008 Ohm; Id 110A; TO-247AC; Pd 200W; Vgs /-20V

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