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- an 2024-09-24 in (General electronic semiconductor)
- Role of Gallium Nitride HEMT Models in Enhancing Device Performance
- Overview: The article explores the limitations of silicon-based power devices and highlights gallium nitride as a promising alternative. It discusses the importance of accurate modeling for optimizing
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- an 2016-08-16 in (General electronic semiconductor)
- Good Vibrations: Advancing the cause of energy harvesting
- Research challengeElectrical harvesting is the conversion of freely available ambient energy such as vibrations into electrical power. This power can then be used to supply low-power, autonomous elect
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- an 2018-09-06 in (General electronic semiconductor)
- Basic IGBT Tutorial: Short-circuit Protection and Driving Circuit
- The insulated gate bipolar transistor (hereinafter referred to as IGBT) is a composite device of MOSFET and GTR. Thus it has the advantages of MOSFET and GTR, it is an ideal switch device to replace G
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- an 2024-05-20 in (General electronic semiconductor)
- Tunable Semiconductor Lasers: Advantages, Applications, Types, and Working Principle
- Overview: This article describes the advantages, applications, and types of tunable semiconductor lasers. It explores how these lasers can be finely tuned to emit specific wavelengths, offering essent
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