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Maximizing Efficiency and Performance in High-Frequency Converters

  • Contents

Overview: This article provides a thorough analysis of future research hotspots and challenges related to high-frequency converters. Important concerns like topology selection, resonant gate drivers, and magnetic components are all examined.

 

In many industrial applications, the invention of power electronic converters tends to attain high efficiency and high power density simultaneously. With the emergence of third-generation semiconductor materials like silicon carbide (SiC) and gallium nitride (GaN) in recent years, the switching frequency of several MHz has drawn a lot of attention.

 

As a result, traditional technology is unable to keep up with the demand, and a number of new difficulties arise. In-depth reviews of hotspots for future study and challenges related to these high-frequency converters are presented.

Challenges in Control Method

The increase in switching frequency also presents a new challenge to traditional control approaches because the digital controller generates the pulse width modulation signals with a finite clock speed.

 

Another problem is that a single frequency step in the digital signal processor (DSP) can cause a big change in switching frequencies. If the frequency resolution is not good, performance may get worse at high switching frequencies. As a result, in high-frequency applications, it is vital to investigate the control approach appropriate for a certain converter.

Proposed Solution

For instance, a pulse width modulation and pulse frequency modulation (PFM) hybrid control method for a 1 MHz LLC converter was proposed. The hybrid algorithm is better at regulating the output voltage than the traditional PFM method. It also has fewer current spikes on both the primary and secondary sides.

Advantages of Matrix Transformer

The need for digital content is increasing along with cloud computing, which means that low-voltage and high-current LLC converters are essential. However, the huge output current of such an LLC converter makes design extremely difficult.

 

By dividing the current among several parts, matrix transformers perform exceptionally well in these situations to lower the overall transformer losses. The turn ratio of each separate transformer is lowered as a result of splitting a single transformer into multiple elemental arrays that are interconnected to produce a single transformer. It is especially useful for transformers that rely on PCB windings. LLC converter with a matrix transformer is shown in Fig. 1.

Fig. 1. LLC converter with a matrix transformer Source: IEEE Open Journal of the Industrial Electronics Society

The main focus of a matrix transformer's ideal design is its structure. It is not advantageous to have more matrix transformers than necessary. The more matrix transformers there are, the higher the core loss. The ideal number of matrix transformers needs to be chosen based on efficiency optimization and specific circumstances.

Proposed Matrix Transformer

A number of innovative matrix transformer architectures were presented in order to combine many matrix transformers into a single core. The windings were also organized sensibly to further minimize core loss.

 

On the other hand, the standard winding loss model does not work for matrix transformers, so an accurately winding DC resistance model and an analytic winding AC resistance model that do work for matrix transformers have been suggested.

Challenges in Gate Drivers

Even though resonant gate drive technology is pretty advanced, designing a gate-driver circuit should improve switching performance when used with wide-band gap devices.

 

MOSFETs are not perfect devices and have some parasitic characteristics for real-world applications. Gate parasitic inductance, drain parasitic inductor, source parasitic inductor, gate resistor, gate-source capacitor, drain-source capacitor, and gate drain capacitor are the parasitic parameters.

 

These parasitic characteristics have various effects on the switching process.

For instance,

  • The driving signal will oscillate due to gate parasitic inductance.
  • Because of the negative feedback effect, larger source parasitic inductors usually slow down switching speeds and have a big effect on switching energy.
  • Conversely, larger drain parasitic inductors cause more severe oscillations in the drain-source voltage.
  • Switching loss is connected to the switch capacitors.

 

The driving loss in conventional voltage source driver circuits makes up the majority of the total losses. Resonant gate drive (RGD) circuits have been offered as a solution to address the issue and offer improved performance in high-frequency applications.

 

A type of drive circuit called a current source driver (CSD) produces a steady drive current that charges and discharges the power MOSFET gate capacitance. In this way, it works better than resonant gate drivers because it lowers switching losses in hard switching converters with fast switching rates.

Silicon Carbide Gate Driver

SiC-MOSFETs have a lower transconductance than Si-MOSFETs in terms of device properties. Thus, in order to reach the lowest drain-source voltage saturation, a greater gate-source voltage is needed. SiC-MOSFETs normally have a gate-source voltage of 15–20 V, whereas Si-MOSFETs typically have a gate-source voltage of 8–10 V.

 

However, a negative gate-source voltage level is necessary during turn-off due to the SiC-MOSFET's quick switching speed and low turn-on threshold. For SiC devices, a −2 V to −5 V drive is often advised.

Gallium Nitride Gate Driver

Regarding GaN MOSFETs, it is important to take into account the substantial reverse conduction loss resulting from the lack of a body diode, as well as the fact that the gate voltage cannot exceed the maximum rating of 6 V.

 

A resonant gate driver for gallium nitride with an output of +6/−3.5 V is proposed. However, the current and parasitic inductance restrict the turn-on operation, causing the voltage waveform to oscillate.

 

Research on the use of resonant gate drivers in silicon carbide or gallium nitride-based converters is currently lacking. Over the past few decades, this has been the primary area of research. In addition, two other important subjects for gallium nitride gate drivers are active gate drivers and IC design.

Planar Magnetic Component

Planar magnetic components have considerable advantages in high-frequency applications due to their huge heat dissipation area and low profile. Additionally, operating at high frequencies can result in significant performance increases when employing magnetic materials that are readily available on the market.

 

For high-frequency applications, magnetic materials should be taken into account in addition to the core topology. The loss of magnetic components will grow with an increase in switching frequency and magnetic flux density.

 

And low electrical conductivities and low permeability aid in reducing loss. Companies like FERROXCUBE, HITACHI, and TOKIN now offer materials appropriate for the MHz level. The control of parasitic characteristics is the primary focus of the magnetic component design.

 

To conclude, researchers are now more interested in finding ways to improve performance in terms of cost, reliability, and control strategy for high-frequency converter topologies.

 

WBG devices must be used in conjunction with a high-frequency driving strategy. High-frequency driving strategy, magnetic component design, and high-frequency converter topology are all included in high-frequency technology.

Summarizing the Key Points

  • High-frequency converters are gaining attention due to the emergence of third-generation semiconductor materials like silicon carbide and gallium nitride.

 

  • Choosing the right topology, resonant gate drivers, and magnetic parts is very important for making high-frequency converters work better and more efficiently.

 

  • Regarding matrix transformers, they perform exceptionally well in low-voltage and high-current LLC converters, which are essential for digital content and cloud computing.

 

  • The challenges in control methods include the need for improved cost-effectiveness, reliability, and control strategy. Researchers are now more interested in finding ways to improve performance in these areas

 

  • Planar magnetic components have considerable advantages in high-frequency applications due to their huge heat dissipation area and low profile.

 

  • In conclusion, this article provides a comprehensive analysis of future research hotspots and challenges related to high-frequency converters.

Reference

Wang, Yijie, Oscar Lucia, Zhe Zhang, Shanshan Gao, Yueshi Guan, and Dianguo Xu. “A Review of High Frequency Power Converters and Related Technologies.” IEEE Open Journal of the Industrial Electronics Society 1 (2020): 247–60. https://doi.org/10.1109/ojies.2020.3023691.

Rakesh Kumar, Ph.D.

Rakesh Kumar holds a Ph.D. in electrical engineering, specializing in power electronics. He is a Senior Member of the IEEE Power Electronics Society, Class of 2021. He writes high-quality, long-form technical articles for global B2B semiconductor brands. Feel free to reach out to him at rakesh.a@ieee.org! Checkout his complete portfolio @muckrack.com/rakesh-kumar-phd | @linkedin.com/in/rakesh-kumar-phd

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