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Potential of Gallium Arsenide in Solar Cell Technology

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Overview: This article lists various semiconductor materials utilized in solar cell technology, focusing on gallium arsenide. It explores the properties, advantages, and disadvantages, highlighting the superior efficiency and applications of gallium arsenide in solar cells.

 

Various semiconductor materials, such as cadmium telluride, copper indium gallium selenide, and gallium arsenide, can be utilized to create solar cells. Thin-film technologies make use of these semiconductor materials.

 

Firstly, cadmium telluride appears to be as effective as crystalline silicon, but telluride sources are limited, and cadmium is extremely poisonous.

 

Secondly, copper indium gallium selenide has a good efficiency of up to 20% but comes with higher production costs. Most of these semiconductor materials, including silicon, have only an efficiency of up to 20%.

 

Why is gallium arsenide used as a solar cell?

The combination of the elements gallium and arsenide, known as gallium arsenide, offers the highest solar cell efficiency, up to 30%. Gallium, with atomic number 31 and from group III, is not found naturally; it can be found in trace amounts in minerals like bauxite and is a byproduct of zinc.

 

Arsenide has an atomic number of 33 and belongs to the V group. These groups III and V are known for their particular characteristics; when combined, they provide a wide spectrum of bandgaps that are useful in numerous electronic applications.

 

The distance between the valence and conduction bands is known as the band gap or forbidden gap, as shown in Fig. 1. The band gap is a crucial factor in determining the conductivity of a material.

 

In metals, the valence and conduction bands overlap, making them very conductive. On the other hand, the bandgap is much lower in semiconductors like silicon, gallium, and arsenide, which means that they conduct electricity when heated up (when exposed to photons). Finally, the bandgap is higher in insulators like rubber, making them non-conductive.

 

Illustration of a semiconductor with a smaller bandgap

 

In semiconductors, the incident photon must have energy larger than the semiconductor material's bandgap to knock an electron from the valence band into the conduction band, where it is free to move and conduct electricity.

 

Compound semiconductors like gallium arsenide have a bandgap of about 1.4 eV. The majority of photons emitted by the sun have an energy of approximately 1.5 eV, which is very close to the bandgap of the gallium arsenide semiconductor material.

 

Hence, the solar cell made of gallium arsenide can excite the electron from its valence band to its conduction band and achieve its highest efficiency.

 

In contrast, a high-band gap semiconductor material such as gallium nitride, which has a bandgap of 3.4 eV, and an incident photon with a bandgap of 1.5 eV will not have enough energy to dislodge an electron from the valence shell. Therefore, the efficiency of gallium nitride would be low, making them unsuitable for use as solar cells.

 

Advantages

Gallium arsenide is a direct bandgap semiconductor material, meaning that the valence band's highest energy and the conduction band's lowest energy levels occur at the same momentum level, as shown in Fig. 2.

 

This process facilitates the direct transfer of electrons, leading to the emission or absorption of energy. Gallium arsenide possesses the ability to efficiently absorb or emit photons, making it often utilized in applications that involve the conversion of light into electricity or vice versa.

 

Illustrates the difference between direct bandgap and indirect bandgap semiconductors

 

Gallium arsenide has significantly higher electron mobility compared to silicon, resulting in a gain in efficiency of up to 30% in solar cells, and they are even commonly employed as high electron mobility transistors (HEMT).

 

Gallium arsenide has enhanced resistance to heat and moisture. As the temperature rises, the production of charge carriers (electron-hole pairs) increases. Consequently, gallium arsenide is well-suited for use in applications that operate at elevated temperatures.

 

Limitations

Despite gallium arsenide's impressive record efficiency of up to 30%, its deployment as a common solar cell is limited due to the high manufacturing costs. The cost of solar cells fluctuates depending on the production method, equipment expenses, and the number of junctions involved.

 

The fabrication of gallium arsenide is a highly intricate procedure and has significant costs. Most commonly, they are associated with the epitaxial growth method and the expensive source materials. Research is being conducted to decrease the manufacturing expenses associated with gallium arsenide.

 

The gallium arsenide films formed are extremely fragile and susceptible to numerous crystalline defects. Due to its brittleness, gallium is often fabricated in smaller ingot sizes than silicon. Arsenide, a highly poisonous substance, requires meticulous handling during manufacturing and disposal.

 

Applications

Gallium arsenide exhibits enhanced performance at elevated temperatures, making it a frequently utilized material in aerospace applications. They provide a wide range of spectral coverage.

 

The initial documented practical application of gallium arsenide solar cells in outer space occurred during the Venera 3 mission, launched in 1965.

 

Additionally, they were employed for the Lunokhod rovers and subsequently became the predominant cell type utilized for solar arrays in satellite applications.

 

They are frequently utilized in the aviation and defense sectors because of their numerous benefits. They are also employed in unmanned aerial vehicles. Additionally, they are utilized as concentrators.

 

Multijunctional Solar Cells

Gallium arsenide solar cells can optimize their performance through layering, allowing for the incorporation of up to eight thin layers. Each layer is designed to absorb light at a certain wavelength, enhancing the overall efficiency of the solar cell. These types of photovoltaic cells are referred to as multi-junction.

 

Typically, the uppermost layer possesses a significant difference in energy levels and captures the majority of the visible light spectrum. In contrast, the lower layer has a smaller difference in energy levels and absorbs light.

 

Maximum efficiency can be attained by encompassing a broad range of electromagnetic wavelengths. Additional layers frequently employed include GaAs, AlGaAs, InP, InGaP, and GaInAs. A multijunctional solar cell is depicted in Fig. 3.

 

Diagrammatic illustration of a multijunction solar cell

 

Multi-junction solar cells, also known as thin-layer solar cells, are considered the second generation of solar cells and have already been successfully brought into the commercial market.

 

It is a well-developed and well-controlled technology that is already widely utilized in several fields. Due to their complex structure, they are able to attain greater efficiency compared to traditional single-layer solar cells.

 

To conclude, despite their impressive efficiency, gallium arsenide films' high manufacturing costs and fragility limit their widespread adoption in solar cell technology. Ongoing research aims to reduce manufacturing expenses and address crystalline defects, paving the way for broader utilization of gallium arsenide in solar cells.

 

Summarizing the Key Points

Gallium arsenide offers superior efficiency in solar cells, reaching up to 30% due to its direct bandgap property and high electron mobility.

Its aerospace, defense, and satellite technology applications showcase its reliability and performance in demanding environments.

Multijunctional solar cells with layered structures enhance efficiency by absorbing light at specific wavelengths, optimizing overall performance.

 

Reference

Nikola Papež et al., “Overview of the Current State of Gallium Arsenide-Based Solar Cells,” Materials 14, no. 11 (June 4, 2021): 3075, https://doi.org/10.3390/ma14113075.

Ehab El-Fayome et al., “Proposal for Repairable Silicon Solar Panels: Proof of Concept,” Energies 16, no. 18 (September 8, 2023): 6492, https://doi.org/10.3390/en16186492.

Athil S. Al-Ezzi and Mohamed Nainar M. Ansari, “Photovoltaic Solar Cells: A Review,” Applied System Innovation 5, no. 4 (July 8, 2022): 67, https://doi.org/10.3390/asi5040067.

Rakesh Kumar, Ph.D.

Rakesh Kumar holds a Ph.D. in electrical engineering, specializing in power electronics. He is a Senior Member of the IEEE Power Electronics Society, Class of 2021. He writes high-quality, long-form technical articles for global B2B semiconductor brands. Feel free to reach out to him at rakesh.a@ieee.org! Checkout his complete portfolio @muckrack.com/rakesh-kumar-phd | @linkedin.com/in/rakesh-kumar-phd

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