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Examining Electromagnetic Noise in Gallium Nitride Power Modules

  • Contents

Overview: The article highlights the trade-off between power efficiency and electromagnetic noise, which can have a significant impact on the sensitivity of wireless receivers. The article includes a study of GaN-based power modules and provides guidelines.

 

Compared to conventional silicon (Si) devices, wide band gap (WBG) semiconductors like gallium nitride (GaN) have become commonly used in power supply electronics.

 

In contrast to conventional Si, WBG semiconductors (such as GaN) offer better material qualities and can operate power devices at greater temperatures, higher voltages, and quicker switching rates when used in the power supply's output stage.

 

As a result, WBG semiconductors increase the efficiency and compactness of power modules, which leads to their widespread adoption in a range of applications, including robotics, automotive electronics, and the Internet of Things.

 

What is the impact of electromagnetic noise on wide-band devices?

Faster switching and higher voltage produce less energy loss, but they also result in more power noise because of the periodic switching currents that flow through power semiconductors. This means that there is no way to avoid a trade-off between noise emissions and power efficiency.

Role of Electromagnetic Inference and Electromagnetic Compatibility

In close proximity to one another, this also causes issues with near-field electromagnetic interference (EMI) between electrical components.

 

Power modules using WBG devices, such as GaN and SiC, are maturing faster than ever, but it is also important that the EM compatibility (EMC) measurements have a wider frequency range.

 

Up to 1 GHz is typically the frequency range in which power module EMC requirements are established. Electrical noise (EM noise) can have a big effect on the sensitivity of wireless receivers supporting LTE when they are close, like within a few meters.

 

EMI between wireless communication systems and WBG semiconductors has become a widespread issue with IoT devices. The article includes an EM noise study of GaN-based power modules in the frequency band (up to 6 GHz) for mobile communications.

Experimental Setup of Gallium Nitride Power Module

This research involves the preparation of two power modules, called

  • GaN module A
  • GaN module B

 

These modules comprise isolated gate drive circuits employing CMOS devices and GaN-based half-bridge circuits. Although the two modules share the same block architecture in Fig. 1, the assembly structures differ based on the individual design parameters.

 

Illustration-of-the-GaN-based-power-modules-and-experimental-setup

 

Configured as a half-bridge circuit, the output stage is filled with two discrete

transistors based on GaN technology. Gate drive circuits are the key component of the control unit.

 

A pulse pattern generator controls the amount of duty and frequency of pulse messages that come in. The external source signals used in this experiment had the following configurations for their parameters:

 

1) 0 and 12 V for the primary power supply;

2) 100 kHz and 1 MHz for the pulse frequency;

3) 50% for the pulse duty ratio.

Measurement of Electromagnetic Noise

Researchers utilize a magnetic field probe to capture the near-field electromagnetic noise (EM noise) from the device under test (DUT). Everything is enclosed in an anechoic cage to block out surrounding noises.

 

The high-sensitivity measuring method served as the basis for this measurement setup. In order to cover the wireless communication bands for fifth-generation (5G) and LTE wireless systems, the frequency range of interest is 6 GHz.

 

To keep things simple, the measurements below were taken at the power module's output stage with no load. The EM sources are put to the test in a variety of operating conditions by sending source signals and probing at different points in the GaN module assembly.

 

By changing the external signal source's settings, the power supply module was able to function in two distinct modes.

Module A

One was established as the basic operational condition, with

  • Mains: 12 V
  • Operating frequency: 100 kHz
  • Duty ratio: 50%, with all circuits driven.

Hence, the control unit and the GaN device were monitored for their radiated noise.

 

Module B

On the other hand,

  • The GaN device's switching function is disabled
  • The main power supply is set to 0 V

 

In this instance, the control unit's noise component is the only radiated noise that is visible. So, the source of the radiated noise in the power supply module was studied by changing the state of the circuit's operation and comparing the noise components that were picked up.

 

The above experiments (Fig. 2 and Fig. 3) show what happens when the output stage is not working (the red line does not include EM noise from the output stage) and when it is working (the blue line includes EM noise from the output stage and the control unit).

 

Frequency-characteristics-of-EM-noise-from-the-output-stage-and-the-control-unit-in-GaN-module-A

 

Frequency-characteristics-of-EM-noise-from-the-output-stage-and-the-control-unit-in-GaN-module-B

 

Results And Conclusion

A spectrum analyzer measures the average electromagnetic noise, as Fig. 2 illustrates. Below 1.5 GHz, electromagnetic noise from the output stage is detected. Harmonic components of the switching frequency that the pulse generator sets are primarily responsible for this noise.

 

A two-sided structure was used to look at the frequency characteristics of EM noise coming from GaN module B's control unit and output stage on the right side. As shown in Fig. 3, EM noise from the output stage was primarily detected below 2 GHz.

 

The main sources of noise are

  • An output stage with WBG power transistors that switch periodically.
  • The control and gate driver stages have CMOS digital circuits that get their clock signal from outside or even inside the chip.

 

The EM noise from the output stage usually takes up most of the lower frequency side, as seen in Fig. 3. The frequency range and noise level of EM noise based on GaN transistors change based on how fast the switching power modules are running.

 

While the noise from the control circuit is more likely to be on the upper frequency side, as seen in Fig. 2. In conclusion, control circuits in switching modules as well as output stage circuits are the targets of noise controls for wireless communications.

 

The intrinsic characteristics of circuit architectures determine the electromagnetic noise of the control unit, which is independent of the power supply module's operational circumstances. This necessitates doing an EM noise evaluation on a particular product and customizing EMI countermeasures for it.

 

Summarizing the Key Points

●Gallium nitride technology revolutionizes power supply electronics with its superior material qualities, enabling higher operating temperatures and faster switching rates.

●The trade-off between power efficiency and electromagnetic noise is a critical consideration when utilizing gallium nitride based power modules.

●Electromagnetic interference between electrical components, particularly in the frequency band up to 6 GHz, necessitates thorough evaluation and implementation of control measures.

●The intrinsic characteristics of circuit architectures determine the electromagnetic noise of the control unit, highlighting the need for customized electromagnetic interferance countermeasures tailored to specific products.

 

Reference

Watanabe, Koh, Misaki Komatsu, Mai Aoi, Ryota Sakai, Satoshi Tanaka, and Makoto Nagata. “Analysis of Electromagnetic Noise From Switching Power Modules Using Wide Band Gap Semiconductors.” IEEE Letters on Electromagnetic Compatibility Practice and Applications 4, no. 4 (December 2022): 92–96. https://doi.org/10.1109/lemcpa.2022.3207234.

Rakesh Kumar, Ph.D.

Rakesh Kumar holds a Ph.D. in electrical engineering, specializing in power electronics. He is a Senior Member of the IEEE Power Electronics Society, Class of 2021. He writes high-quality, long-form technical articles for global B2B semiconductor brands. Feel free to reach out to him at rakesh.a@ieee.org! Checkout his complete portfolio @muckrack.com/rakesh-kumar-phd | @linkedin.com/in/rakesh-kumar-phd

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