The Kynix Blog - Transistors

Transistors, the workhorses of the electronics world, are plagued by leakage current. This results in unnecessary energy losses, which is why smartphones and laptops, for example, have to be recharged so often. Tom van Hemert and Ray Hueting of the University of Twente's MESA+ Institute for Nanotechnology have shown that this leakage current can be radically reduced by "squeezing" the transistor with a piezoelectric material (which expands or contracts when an electrical charge is applied to it). Using this approach, they have smashed the theoretical limit for leakage current. Tom van Hemert will defend his PhD dissertation on 6 December.If silicon is squeezed, this affects the freedom of movement of the electrons in this material. This can promote or restrict the flow of electrical current. Compare it to a garden hose. When you stand on it, less water comes out. But strangely enough, the flow of electrons in silicon actually increases when the material is compressed.Only pinch when necessaryIn modern microchips, every single transistor is continuously exposed to enormous pressures of up to 10,000 atmospheres. This pressure is sealed in during the manufacturing process, by surrounding the transistors with compressive materials. While this boosts the chip's processing speed, the leakage current also increases. The use of piezoelectric material means that the transistors are only put under pressure when this is necessary. This can generate considerable savings in terms of energy consumption.Limit smashedThe underlying concept was originally developed by Ray Hueting. In order to turn this into reality, Tom van Hemert had to find a way of linking theories of mechanical deformation with quantum-mechanical formulas describing the electrical behaviour of transistors. The calculations indicate that "garden hose transistors" are much better than conventional transistors at switching from off to on. According to the classical theoretical limit, a charge of at least 60 millivolts is needed to make a transistor conduct ten times more electricity. The piezoelectric transistor uses just 50 millivolts. As a result, either the leakage current can be reduced, or more current can be carried in the on-state. Either way, this will boost the performance of modern microchips, while - importantly - cutting their energy consumption.Reference:KY56-2SA1987KY56-C4706KY56-2sb1647 

A newly-developed form of transistor opens up a range of new electronic applications including wearable or implantable devices by drastically reducing the amount of power used. Devices based on this type of ultralow power transistor, developed by engineers at the University of Cambridge, could function for months or even years without a battery by 'scavenging' energy from their environment.Using a similar principle to a computer in sleep mode, the new transistor harnesses a tiny 'leakage' of electrical current, known as a near-off-state current, for its operations. This leak, like water dripping from a faulty tap, is a characteristic of all transistors, but this is the first time that it has been effectively captured and used functionally. The results, reported in the journal Science, open up new avenues for system design for the Internet of Things, in which most of the things we interact with every day are connected to the Internet.The transistors can be produced at low temperatures and can be printed on almost any material, from glass and plastic to polyester and paper. They are based on a unique geometry which uses a 'non-desirable' characteristic, namely the point of contact between the metal and semiconducting components of a transistor, a so-called 'Schottky barrier.'"We're challenging conventional perception of how a transistor should be," said Professor Arokia Nathan of Cambridge's Department of Engineering, the paper's co-author. "We've found that these Schottky barriers, which most engineers try to avoid, actually have the ideal characteristics for the type of ultralow power applications we're looking at, such as wearable or implantable electronics for health monitoring."The new design gets around one of the main issues preventing the development of ultralow power transistors, namely the ability to produce them at very small sizes. As transistors get smaller, their two electrodes start to influence the behaviour of one another, and the voltages spread, meaning that below a certain size, transistors fail to function as desired. By changing the design of the transistors, the Cambridge researchers were able to use the Schottky barriers to keep the electrodes independent from one another, so that the transistors can be scaled down to very small geometries.The design also achieves a very high level of gain, or signal amplification. The transistor's operating voltage is less than a volt, with power consumption below a billionth of a watt. This ultralow power consumption makes them most suitable for applications where function is more important than speed, which is the essence of the Internet of Things."If we were to draw energy from a typical AA battery based on this design, it would last for a billion years," said Dr Sungsik Lee, the paper's first author, also from the Department of Engineering. "Using the Schottky barrier allows us to keep the electrodes from interfering with each other in order to amplify the amplitude of the signal even at the state where the transistor is almost switched off.""This will bring about a new design model for ultralow power sensor interfaces and analogue signal processing in wearable and implantable devices, all of which are critical for the Internet of Things," said Nathan.Reference:2SA19872sb1647FJA4213RTU  

Holst Centre, imec and their partner Evonik have realized a general-purpose 8-bit microprocessor, manufactured using complementary thin-film transistors (TFTs) processed at temperatures compatible with plastic foil substrates (250°C). The new "hybrid" technology integrates two types of semiconductors—metal-oxide for n-type TFTs (iXsenic, Evonik) and organic molecules for p-type TFTs—in a CMOS microprocessor circuit, operating at unprecedented for TFT technologies speed—clock frequency 2.1kHz. The breakthrough results were published online in Scientific Reports, an open access journal from the publisher of Nature.Low temperature thin-film electronics are based on organic and metal-oxide semiconductors. They have the potential to be produced in a cost effective way using large-area manufacturing processes on plastic foils. Thin-film electronics are, therefore, attractive alternatives for silicon chips in simple IC applications, such as radio frequency identification (RFID) and near field communication (NFC) tags and sensors for smart food packaging, and in large-area electronic applications, such as flexible displays, sensor arrays and OLED lamps. Holst Centre's (imec and TNO) research into thin-film electronics aims at developing a robust, foil-compatible, high performance technology platform, which is key to making these new applications become a reality.The novel 8-bit microprocessor performs at a clock frequency of 2.1 kHz. It consists of two separate chips: a processor core chip and a general-purpose instruction generator (P2ROM). For the processor core chip, a complementary hybrid organic-oxide technology was used (p:n ratio 3:1). The n-type transistors are 250°C solution-processed metal-oxide TFTs with typically high charge carrier mobility (2 cm2/Vs). The p-type transistors are small molecule organic TFTs with mobility of up to 1 cm2/Vs.The complementary logic allows for a more complex and complete standard cell library, including additional buffering in the core and the implementation of a mirror adder in the critical path. These optimizations have resulted in a high maximum clock frequency of 2.1kHz. The general-purpose instruction generator or P2ROM is a one-time programmable ROM memory configured by means of inkjet printing, using a conductive silver ink. The chip is divided into a hybrid complementary part and a unipolar n-TFT part and is capable of operating at frequencies up to 650 Hz, at an operational voltage of Vdd=10V.Reference:KY56-KST2222KY56-KST06KY56-KSP14  

The electronics world has been dreaming for half a century of the day you can roll a TV up in a tube. Last year, Samsung even unveiled a smartphone with a curved screen—but it was solid, not flexible; the technology just hasn't caught up yet.But scientists got one step closer last month when researchers at the U.S. Department of Energy's Argonne National Laboratory reported the creation of the world's thinnest flexible, see-through 2-D thin film transistors.These transistors are just 10 atomic layers thick—that's about how much your fingernails grow per second.Transistors are the basis of nearly all electronics. Their two settings—on or off—dictate the 1s and 0s of computer binary language. Thin film transistors are a particular subset of these that are typically used in screens and displays. Virtually all flat-screen TVs and smartphones are made up of thin film transistors today; they form the basis of both LEDs and LCDs (liquid crystal displays)."This could make a transparent, nearly invisible screen," said Andreas Roelofs, a coauthor on the paper and interim director of Argonne's Center for Nanoscale Materials. "Imagine a normal window that doubles as a screen whenever you turn it on, for example."To measure how good a transistor is, you measure its on-off ratio—how completely can it turn off the current?—and a property called "field effect carrier mobility," which measures how quickly electrons can move through the material."We were pleased to find that the on/off ratio is just as good as current commercial thin-film transistors," said Argonne postdoctoral scientist and first author Saptarshi Das, "but the mobility is a hundred times better than what's on the market today."The team also tried bending the films to test what happens under stress. In most thin film transistors, the material starts to crack, which, as you might imagine, affects performance. "But in ours, the properties didn't change at all," Roelofs said. "The layers just slide and don't crack."The transistors also maintained performance over a wide range of temperatures (from -320°F to 250°F), a useful property in electronics, which can run very hot.To build the transistors, the team started with a trick that earned its original University of Manchester inventors the Nobel Prize: using a strip of scotch tape to peel off a sheet of tungsten diselenide just atoms thick."We chose tungsten diselenide because it provides the electron and hole conduction necessary for making transistors with logic gates and other p-n junction devices," said Argonne scientist and coauthor Anirudha Sumant.Then they used chemical deposition to grow sheets of other materials on top to build the transistor layer by layer. The final product is 10 atomic layers thick. (See sidebar for an illustration).Next, the team is interested in adding logic and memory to flexible films, so you could make not just a screen but an entire flexible and transparent TV or computer."However, more work needs to be done in developing large-area synthesis of tungsten selenide to realize the true potential for applications of our work," said Sumant.    

VTT Technical Research Centre of Finland has developed a method for the manufacture of thin film transistors using a roll-to-roll technique only. Thin film transistors can now be manufactured using roll-to-roll techniques, such as printing, for the deposition of patterns on the substrate layer of film. This is set to expand the range of electronic components and products, while slashing their production costs. Thin film transistors are more suitable than traditional silicon chip transistors for applications such as large-surface display screens, certain sensor applications, toys, games and smart cards.A transistor is a basic electronic component which can function as an electrical switch, an amplifier or a memory element. For transistor technology, roll-to-roll fabrication techniques have a range of advantages. These include the possibility to use large surface areas, as well as mechanical flexibility, transparency and low production start-up costs. Until now, production of thin film transistors has typically been only partly based on roll-to-roll techniques, resulting in fairly high mass production costs.As the technology matures, it is predicted that the markets for thin film transistors will grow from their current value of three million dollars to around 180 million over the next decade.VTT has developed thin film transistor production techniques as part of the EU POLARIC research project. With the aid of a special self-aligning technique, the method under development eliminates the challenge of aligning the patterns in the different thin film layers accurately against each other in the roll-to-roll process. In addition, the pattern size for transistor components is pushed to the limit of minuteness possible for printing techniques; this means patterns of a few dozen micrometres at their tiniest..Producing thin film transistors using a self-aligning roll-to-roll manufacturing process is one of the few demonstrations internationally so far. Initial experiences of this thin film transistor manufacturing process are promising. It provides VTT with the ideal basis for using the process to test thin film materials as they develop, to develop more complex electronic circuits and to trial various applications. The goal is to keep developing the technology until it matures enough to provide a springboard for new business activities. VTT is now seeking companies interested in developing applications based on printed thin film transistors. 

Researchers from the University of Twente MESA+ research institute, together with the company SolMateS, have developed a new type of transistor to reduce the power consumption of microchips. The basic element of modern electronics, namely the transistor, suffers from significant current leakage. By enveloping a transistor with a shell of piezoelectric material, which distorts when voltage is applied, researchers were able to reduce this leakage by a factor of five (compared to a transistor without this material). An article presenting the prototype of the transistor appears in the June issue of IEEE Transactions on Electron Devices, an authoritative scientific journal in the field of transistor research.Current leakage in transistors is one of the causes of battery depletion in portable electronic devices, such as smartphones and laptops. With the new type of transistor, either the current leakage (while the transistor is not active) or the energy consumption (while the transistor is active) can be addressed. In the latter case, it is estimated that energy consumption can be reduced by approximately 10%.Intelligent squeezingThe trick lies in a piezoelectric material which is applied to the exterior of the transistor. The piezoelectric material expands when you apply a voltage to it and compresses the silicon in the transistor with a pressure of about 10,000 atmospheres. This high pressure ensures that electrons flow through the transistor faster. You can therefore make microchips more efficient by 'intelligently squeezing the transistor'.Incidentally, existing transistors are already put under high pressure in order to improve their efficiency. In this case, however, the pressure is permanently built in, which actually increases the current leakage. In the prototype designed by the UT, the transistor is only put under pressure when required and this makes a big difference. The electric current needed to switch the transistor from on to off is thereby partly replaced by mechanical tension.CrudeAccording to dr. ir. Ray Hueting from the chair Semiconductor Components, this is an initial prototype that can already produce energy savings. "The design is still fairly crude where the material is concerned. With the further development of the transistor, it should therefore be possible to achieve a further significant increase in efficiency."The operating principle of this transistor was theoretically predicted in 2013 by the same research group. But in advance it was by no means certain that the transistor would be a success. The reason for this is that piezoelectric materials and silicon (which transistors are made of) are difficult to combine. The researchers solved this by inserting a buffer layer between the two materials.