The Kynix Blog - Transistors

It's hardly a character flaw, but organic transistors—the kind envisioned for a host of flexible electronics devices—behave less than ideally, or at least not up to the standards set by their rigid, predictable silicon counterparts. When unrecognized, a new study finds, this disparity can lead to gross overestimates of charge-carrier mobility, a property key to the performance of electronic devices.If measurements fail to account for these divergent behaviors in so-called "organic field-effect transistors" (OFETs), the resulting estimates of how fast electrons or other charge carriers travel in the devices may be more than 10 times too high, report researchers from the National Institute of Standards and Technology (NIST), Wake Forest University and Penn State University. The team's measurements implicate an overlooked source of electrical resistance as the root of inaccuracies that can inflate estimates of organic semiconductor performance.Already used in light-emitting diodes, or LEDs, electrically conductive polymers and small molecules are being groomed for applications in flexible displays, flat-panel TVs, sensors, "smart" textiles, solar cells and "Internet of Things" applications. Besides flexibility, a key selling point is that the organic devices—sometimes called "plastic electronics"—can be manufactured in large volumes and far more inexpensively than today's ubiquitous silicon-based devices.A key sticking point, however, is the challenge of achieving the high levels of charge-carrier mobility that these applications require. In the semiconductor arena, the general rule is that higher mobility is always better, enabling faster, more responsive devices. So chemists have set out to hurry electrons along. Working from a large palette of organic materials, they have been searching for chemicals—alone or in combination—that will up the speed limit in their experimental devices.Just as for silicon semiconductors, assessments of performance require measurements of current and voltage. In the basic transistor design, a source electrode injects charge into the transistor channel leading to a drain electrode. In between sits a gate electrode that regulates the current in the channel by applying voltage, functioning much like a valve.Typically, measurements are analyzed according to a longstanding theory for silicon field-effect transistors. Plug in the current and voltage values and the theory can be used to predict properties that determine how well the transistor will perform in a circuit.Results are rendered as a series of "transfer curves." Of particular interest in the new study are curves showing how the drain current changes in response to a change in the gate electrode voltage. For devices with ideal behavior, this relationship provides a good measure of how fast charge carriers move through the channel to the drain."Organic semiconductors are more prone to non-ideal behavior because the relatively weak intermolecular interactions that make them attractive for low-temperature processing also limit the ability to engineer efficient contacts as one would for state-of-the-art silicon devices," says electrical engineer David Gundlach, who leads NIST's Thin Film Electronics Project. "Since there are so many different organic materials under investigation for electronics applications, we decided to step back and do a measurement check on the conventional wisdom."Using what Gundlach describes as the semiconductor industry's "workhorse" measurement methods, the team scrutinized an OFET made of single-crystal rubrene, an organic semiconductor with a molecule shaped a bit like a microscale insect. Their measurements revealed that electrical resistance at the source electrode—the contact point where current is injected into the OFET— significantly influences the subsequent flow of electrons in the transistor channel, and hence the mobility.In effect, contact resistance at the source electrode creates the equivalent of a second valve that controls the entry of current into the transistor channel. Unaccounted for in the standard theory, this valve can overwhelm the gate—the de facto¬ regulator between the source and drain in a silicon semiconductor transistor—and become the dominant influence on transistor behavior.At low gate voltages, this contact resistance at the source can overwhelm device operation. Consequently, model-based estimates of charge-carrier mobility in organic semiconductors may be more than 10 times higher than the actual value, the research team reports.Hardly ideal behavior, but the aim of the study, the researchers write, is to improve "understanding of the source of the non-ideal behavior and its impact on extracted figures of merit," especially charge-carrier mobility. This knowledge, they add, can inform efforts to develop accurate, comprehensive measurement methods for benchmarking organic semiconductor performance, as well as guide efforts to optimize contact interfaces.Reference:2SA1987C4706FJA4213RTU 

Together with his research team, Lars-Erik Wernersson, professor of nanoelectronics at Lund University in Sweden, has developed a technology for smarter transistors which could be used in electronics that operate on low energy, such as sensors for the IoT. Using the new transistors on a large scale could save enormous amounts of energy. Transistors are the smallest building blocks in electronics - a kind of switch.When the amount of energy required to switch the transistors on or off is reduced, major savings can be made overall. Transistors with low-energy consumption are expected to be highly significant for applications within the IoT.With the help of nanotechnology, the material and architecture in the transistors have been optimised so that they consume only a third of the energy required with the current technology when operating at low voltages. They can be used in digital circuits, various sensors and communication.“We have been able to operate the transistors under what is known as the fundamental thermionic limit, which reduces energy consumption. The next step is to continue to study the physics and to understand the components better, so that they can be further optimised. We also want to find new ways of transferring the technology to industry,” says Lars-Erik Wernersson.The researchers’ findings will probably have moved into production processes within five to ten years. According to Lars-Erik Wernersson, the extent of the energy savings will depend on the quality of the components which can be produced in industry.“The dream scenario is that all data servers will consume less energy thanks to the technology we use. In that case, the savings in one year would be comparable to all the energy consumed in Great Britain during the same period.”When his researcher colleagues recently reported data from an experiment conducted within the EU-funded E2SWITCH project, Lars-Erik Wernersson, along with the doctoral students who carried out the test, realised that these were ground-breaking results:“We have repeated the tests many times and succeeded in demonstrating that the performance with this new, energy-saving technology is not only satisfactory, but even better than that based on the traditional technologies.”According to Lars-Erik Wernersson, the new technology is a complement and one of several technologies which can be used to create more energy-efficient transistors – and different types of applications require different solutions.“We are very happy to have found something that many people have been searching for. We have shown that the transistors have high performance and that it is possible to reduce energy consumption. And now we can continue to add pieces to the puzzle,” concludes Lars-Erik Wernersson.Reference:2SA1987C47062sb1647 

In electronics, lower power consumption leads to operation cost savings, environmental benefits and the convenience advantages from longer running devices. While progress in energy efficiencies has been reported with alternative materials such as SiC and GaN, energy-savings in the standard inexpensive and widely used silicon devices are still keenly sought. K Tsutsui at Tokyo Institute of Technology and colleagues in Japan have now shown that by scaling down size parameters in all three dimensions their device they can achieve significant energy savings.Tsutsui and colleagues studied silicon insulated gate bipolar transistors (IGBTs), a fast-operating switch that features in a number of every day appliances. While the efficiency of IGBTs is good, reducing the ON resistance, or the voltage from collector to emitter required for saturation (Vce(sat)), could help increase the energy efficiency of these devices further.Previous investigations have highlighted that increases in the "injection enhancement (IE) effect", which give rise to more charge carriers, leads to a reduction in Vce(sat). Although this has been achieved by reducing the mesa width in the device structure, the mesa resistance was thereby increased as well. Reducing the mesa height could help counter the increased resistance but is prone to impeding the (IE) effect. Instead the researchers reduced the mesa width, gate length, and the oxide thickness in the MOSFET to increase the IE effect and so reduce Vce(sat) from 1.70 to 1.26 V. With these alterations the researchers also used a reduced gate voltage, which has advantages for CMOS integration.They conclude, "It was experimentally confirmed for the first time that significant Vce(sat) reduction can be achieved by scaling the IGBT both in the lateral and vertical dimensions with a decrease in the gate voltage."Reference:2SA1987C4706KSC5024RTU  

Tokyo Tech researchers demonstrate operation energy-savings in a low price silicon power transistor structure by scaling down in all three dimensions. In electronics, lower power consumption leads to operation cost savings, environmental benefits and the convenience advantages from longer running devices. While progress in energy efficiencies has been reported with alternative materials such as SiC and GaN, energy-savings in the standard inexpensive and widely used silicon devices are still keenly sought.K Tsutsui at Tokyo Institute of Technology and colleagues in Japan have now shown that by scaling down size parameters in all three dimensions their device they can achieve significant energy savings.Tsutsui and colleagues studied silicon insulated gate bipolar transistors (IGBTs), a fast-operating switch that features in a number of every day appliances. While the efficiency of IGBTs is good, reducing the ON resistance, or the voltage from collector to emitter required for saturation (Vce(sat)), could help increase the energy efficiency of these devices further.Previous investigations have highlighted that increases in the “injection enhancement (IE) effect”, which give rise to more charge carriers, leads to a reduction in Vce(sat). Although this has been achieved by reducing the mesa width in the device structure, the mesa resistance was thereby increased as well.Reducing the mesa height could help counter the increased resistance but is prone to impeding the (IE) effect. Instead the researchers reduced the mesa width, gate length, and the oxide thickness in the MOSFET to increase the IE effect and so reduce Vce(sat) from 1.70 to 1.26 V. With these alterations the researchers also used a reduced gate voltage, which has advantages for CMOS integration.They conclude, “It was experimentally confirmed for the first time that significant Vce(sat) reduction can be achieved by scaling the IGBT both in the lateral and vertical dimensions with a decrease in the gate voltage.”These are three terminal devices used as switches or rectifiers. With simple gate-drive characteristics and high-current and low-saturation-voltage capabilities they combine the benefits of two other types of transistors - metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar transistors.The researchers reduced the mesa width, gate length, and the oxide thickness in the MOSFET by a factor of 1/k, and compared devices with values of 1 and 3 for k. Because the fabrication of narrow mesas can cause problems they also reduced the trench depth by 1/k.Although this has a slightly negative effect on the IE effect, it has considerable benefits for fabrication ease and cost and the dependence of (Vce(sat)) on the trench depth was deemed to be small. The gate voltage was also decreased by a factor of 1/k, while the cell pitch was maintained at 16 μm.Reference:2SA1987C4706FJA4213RTU

In an advance that helps pave the way for next-generation electronics and computing technologies—and possibly paper-thin gadgets —scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) developed a way to chemically assemble transistors and circuits that are only a few atoms thick. What's more, their method yields functional structures at a scale large enough to begin thinking about real-world applications and commercial scalability. The scientists controlled the synthesis of a transistor in which narrow channels were etched onto conducting graphene, and a semiconducting material called a transition-metal dichalcogenide, or TMDC, was seeded in the blank channels. Both of these materials are single-layered crystals and atomically thin, so the two-part assembly yielded electronic structures that are essentially two-dimensional. In addition, the synthesis is able to cover an area a few centimeters long and a few millimeters wide. "This is a big step toward a scalable and repeatable way to build atomically thin electronics or pack more computing power in a smaller area," says Xiang Zhang, a senior scientist in Berkeley Lab's Materials Sciences Division who led the study. Zhang also holds the Ernest S. Kuh Endowed Chair at the University of California (UC) Berkeley and is a member of the Kavli Energy NanoSciences Institute at Berkeley. Other scientists who contributed to the research include Mervin Zhao, Yu Ye, Yang Xia, Hanyu Zhu, Siqi Wang, and Yuan Wang from UC Berkeley as well as Yimo Han and David Muller from Cornell University. Their work is part of a new wave of research aimed at keeping pace with Moore's Law, which holds that the number of transistors in an integrated circuit doubles approximately every two years. In order to keep this pace, scientists predict that integrated electronics will soon require transistors that measure less than ten nanometers in length. Transistors are electronic switches, so they need to be able to turn on and off, which is a characteristic of semiconductors. However, at the nanometer scale, silicon transistors likely won't be a good option. That's because silicon is a bulk material, and as electronics made from silicon become smaller and smaller, their performance as switches dramatically decreases, which is a major roadblock for future electronics. Researchers have looked to two-dimensional crystals that are only one molecule thick as alternative materials to keep up with Moore's Law. These crystals aren't subject to the constraints of silicon. In this vein, the Berkeley Lab scientists developed a way to seed a single-layered semiconductor, in this case the TMDC molybdenum disulfide (MoS2), into channels lithographically etched within a sheet of conducting graphene. The two atomic sheets meet to form nanometer-scale junctions that enable graphene to efficiently inject current into the MoS2. These junctions make atomically thin transistors. "This approach allows for the chemical assembly of electronic circuits, using two-dimensional materials, which show improved performance compared to using traditional metals to inject current into TMDCs," says Mervin Zhao, a lead author and Ph.D. student in Zhang's group at Berkeley Lab and UC Berkeley. Optical and electron microscopy images, and spectroscopic mapping, confirmed various aspects related to the successful formation and functionality of the two-dimensional transistors. In addition, the scientists demonstrated the applicability of the structure by assembling it into the logic circuitry of an inverter. This further underscores the technology's ability to lay the foundation for a chemically assembled atomic computer, the scientists say. "Both of these two-dimensional crystals have been synthesized in the wafer scale in a way that is compatible with current semiconductor manufacturing. By integrating our technique with other growth systems, it's possible that future computing can be done completely with atomically thin crystals," says Zhao. Reference: 2N3811 EMX2T2R DMA204020R  

In a development beneficial for both industry and environment, UC Santa Barbara researchers have created a high-quality coating for organic electronics that promises to decrease processing time as well as energy requirements."It's faster, and it's nontoxic," said Kollbe Ahn, a research faculty member at UCSB's Marine Science Institute and corresponding author of a paper published in Nano Letters.In the manufacture of polymer (also known as "organic") electronics—the technology behind flexible displays and solar cells—the material used to direct and move current is of supreme importance. Since defects reduce efficiency and functionality, special attention must be paid to quality, even down to the molecular level.Often that can mean long processing times, or relatively inefficient processes. It can also mean the use of toxic substances. Alternatively, manufacturers can choose to speed up the process, which could cost energy or quality.Fortunately, as it turns out, efficiency, performance and sustainability don't always have to be traded against each other in the manufacture of these electronics. Looking no further than the campus beach, the UCSB researchers have found inspiration in the mollusks that live there. Mussels, which have perfected the art of clinging to virtually any surface in the intertidal zone, serve as the model for a molecularly smooth, self-assembled monolayer for high-mobility polymer field-effect transistors—in essence, a surface coating that can be used in the manufacture and processing of the conductive polymer that maintains its efficiency.More specifically, according to Ahn, it was the mussel's adhesion mechanism that stirred the researchers' interest. "We're inspired by the proteins at the interface between the plaque and substrate," he said.Before mussels attach themselves to the surfaces of rocks, pilings or other structures found in the inhospitable intertidal zone, they secrete proteins through the ventral grove of their feet, in an incremental fashion. In a step that enhances bonding performance, a thin priming layer of protein molecules is first generated as a bridge between the substrate and other adhesive proteins in the plaques that tip the byssus threads of their feet to overcome the barrier of water and other impurities.That type of zwitterionic molecule—with both positive and negative charges—inspired by the mussel's native proteins (polyampholytes), can self-assemble and form a sub-nano thin layer in water at ambient temperature in a few seconds. The defect-free monolayer provides a platform for conductive polymers in the appropriate direction on various dielectric surfaces.Current methods to treat silicon surfaces (the most common dielectric surface), for the production of organic field-effect transistors, requires a batch processing method that is relatively impractical, said Ahn. Although heat can hasten this step, it involves the use of energy and increases the risk of defects.With this bio-inspired coating mechanism, a continuous roll-to-roll dip coating method of producing organic electronic devices is possible, according to the researchers. It also avoids the use of toxic chemicals and their disposal, by replacing them with water."The environmental significance of this work is that these new bio-inspired primers allow for nanofabrication on silicone dioxide surfaces in the absence of organic solvents, high reaction temperatures and toxic reagents," said co-author Roscoe Lindstadt, a graduate student researcher in UCSB chemistry professor Bruce Lipshutz's lab. "In order for practitioners to switch to newer, more environmentally benign protocols, they need to be competitive with existing ones, and thankfully device performance is improved by using this 'greener' method."Reference:KY56-2N3811KY56- EMX2T2RKY0-PEMZ1,115