The Kynix Blog - Memory

Samsung Electronics unveiled the industry’s first removable memory cards based on the JEDEC UFS 1.0 Card Extension Standard, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 GB, Samsung’s UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.“Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution,” said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics.“By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritise performance and user convenience above all.”Samsung’s new 256GB UFS removable memory card ─ simply referred to as the UFS card will provide greatly improved user experiences, especially in high-resolution 3D gaming and high-resolution movie playback.It provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530 MB/s which is similar to the sequential read speed of the most widely used SATA SSDs.With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed.Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS.When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPs of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed.With these substantial performance improvements, the new 256GB UFS card significantly reduces multimedia data downloading time, photo thumbnail loading time and buffer clearing time in burst shooting mode, which, collectively, can be particularly beneficial to DSLR camera users.To shoot 24 large/extra fine JPEG photographs (1,120 MB-equivalent) continuously with a high-end DSLR camera, the 256GB UFS card takes less than seven seconds, compared to a UHS-1 microSD card which typically takes about 32 seconds, at 35MB/s.To achieve the highest performance and most power-efficient data transport, the UFS card supports multiple commands with command queuing features and enables simultaneous reading and writing through the use of separately dedicated paths, doubling throughput.As the leading memory storage provider, Samsung has been aggressive in preparing UFS solutions for the marketplace, while contributing to JEDEC standardisation of the Universal Flash Storage 2.0 specification in September 2013 and the UFS 1.0 Card Extension standard in March 2016.Following its introduction of the industry-first 128GB embedded UFS chip in January 2015, the company successfully launched a 256GB embedded UFS memory for high-end mobile devices in February of this year.As of earlier this month, Samsung also completed the Universal Flash Storage Association (UFSA)’s certification program that evaluates electrical and functional specifications for compatibility of a UFS card, and Samsung’s new UFS card products were approved as UFSA-certified UFS cards with the right to use the official UFS logo for the first time in the industry.Reference:S29GL032N11FFIS42S29GL064N90FFIS30S29AS016J70BFA040  

Last March, the AI program AlphaGo beat Korean Go champion LEE Se-Dol at the Asian board game. "The game was quite tight, but AlphaGo used 1200 CPUs and 56,000 watts per hour, while Lee used only 20 W. If a hardware that mimics the human brain structure is developed, we can operate artificial intelligence with less power," points out Professor YU Woo Jong.In collaboration with Sungkyunkwan University, researchers from the Center for Integrated Nanostructure Physics within the Institute for Basic Science (IBS), have devised a new memory device inspired by the neuron connections of the human brain.The research, published in Nature Communications, highlights the devise's highly reliable performance, long retention time and endurance. Moreover, its stretchability and flexibility makes it a promising tool for next-gen soft electronics attached to clothes or body.The brain is able to learn and memorise thanks to a huge number of connections between neurons. The information you memorise is transmitted through synapses from one neuron to the next as an electro-chemical signal.Inspired by these connections, IBS scientists constructed a memory called two-terminal tunnelling random access memory (TRAM), where two electrodes, referred to as drain and source, resemble the two communicating neurons of the synapse.While mainstream mobile electronics, like digital cameras and mobile phones use the so-called three-terminal flash memory, the advantage of two-terminal memories like TRAM is that two-terminal memories do not need a thick and rigid oxide layer."Flash memory is still more reliable and has better performance, but TRAM is more flexible and can be scalable," explains Professor Yu.TRAM is made up of a stack of one-atom-thick or a few atom-thick 2D crystal layers: One layer of the semiconductor molybdenum disulfide (MoS2) with two electrodes (drain and source), an insulating layer of hexagonal boron nitride (h-BN) and a graphene layer.In simple terms, memory is created (logical-0), read and erased (logical-1) by the flowing of charges through these layers. TRAM stores data by keeping electrons on its graphene layer. By applying different voltages between the electrodes, electrons flow from the drain to the graphene layer tunnelling through the insulating h-BN layer.The graphene layer becomes negatively charged and memory is written and stored and vice versa, when positive charges are introduced in the graphene layer, memory is erased.IBS scientists carefully selected the thickness of the insulating h-BN layer as they found that a thickness of 7.5 nm allows the electrons to tunnel from the drain electrode to the graphene layer without leakages and without losing flexibility.Flexibility and stretchability are indeed two key features of TRAM. When TRAM was fabricated on flexible plastic (PET) and stretachable silicone materials (PDMS), it could be strained up to 0.5% and 20%, respectively.In the future, TRAM can be useful to save data from flexible or wearable smartphones, eye cameras, smart surgical gloves, and body-attachable biomedical devices.Last but not least, TRAM has better performance than other types of two-terminal memories known as phase-change random-access memory (PRAM) and resistive random-access memory (RRAM).Reference:MT16JTF51264AZ-1G6M1MD2202-D192MD2203-D576

B&R has selected the Hyperstone S8 Flash Memory Controller for their recently announced X90 mobile automation product line. The X90 family of products are designed for securing mobile control and I/O tasks in demanding environments experienced by industrial and mobile machines.To meet all requirements of their robust applications B&R implemented the Hyperstone S8 Flash Memory Controller, which operates over an extended temperature range and ensures the highest reliability and endurance even under extreme environmental conditions. The S8 Controller enables the use of advanced technology NAND flashes in demanding, rugged applications e.g. in commercial vehicles and outdoor applications. B&R X90 products deliver robustness and durability hence the choice of Hyperstone products.X90 mobile With a comprehensive set of standardised components, the X90 product line offers automation solutions perfect for flexible automation concepts used in mobile and outdoor applications found in agriculture and forestry, construction or municipal vehicles. Extended temperature range, strong vibrations or shocks and influences such as salt, oil and UV light must be handled by the system. Basic features of the X90 family include interfaces for CAN, USB, Ethernet and the real-time POWERLINK bus system. A flexible set up allows the addition of I/O channels and interfaces. The X90 series was introduced at Bauma 2016 in Munich.S8 The Hyperstone S8 Flash Memory Controller and its application and Flash specific firmware offer a platform for industrial high endurance Flash Memory cards or modules which are compatible with SD interface host systems. Together with Hyperstone’s proprietary hyReliability firmware, S8 provides enhanced endurance and data retention management, as well as rigorous fail-safe features, all of which are mandatory for industrial applications. Implemented hardware features and special firmware developments enable the highest data retention and refresh mechanisms, even when storage applications are faced with extreme environmental conditions.Reference:MT16JTF51264AZ-1G6M1SDUS5EB-001GMD2202-D192MT9VDDT6472HY-335 F2 

Astute Electronics has strengthened its new memory division portfolio by signing a UK and Ireland deal for Innodisk’s industrial embedded flash and DRAM storage products and technologies. Innodisk focuses on industries such as aerospace, defence, industrial and cloud storage to name a few, and where a commitment to quality service is vitally important. The company manufactures all its products in a purpose-built memory production facility located in Taiwan.Mick Martin, Memory Division Manager at Astute says; “Innodisk’s product range matches our customer base exactly. Its product design features fixed-BOM control to ensure product quality, longevity and stability, and the use of industrial-grade components means that products can withstand temperatures ranging from -40 to 85°C. Sample parts are available very quickly and typical production lead times are only two weeks. The company is also able to customise devices to suit specific applications.”With over 62 patents, Innodisk is a technical innovator, pioneering Pin 7 VCC technology in the SATA interface which eliminates the need for power cables.This led to the development of the SATADOM form factor which is certified by Intel and widely adopted by industrial and embedded system designers worldwide.Innodisk offers a wide selection of flash memory form factors. Flash products are available in single-level-cell (SLC) and multi-layer cell (MLC) styles and a comprehensive range of DRAM modules are also included.Specifically, InnoRobust devices have a hi-rel feature set specially designed for aerospace and defence applications, while ISO/TS 16949 approval guarantees that that the company can deliver reliable storage and memory solutions for in-vehicle computing system applications.Reference:MT16JTF51264AZ-1G6M1SDUS5EB-001GMD2202-D192MD2202-D192-X 

New research, led by the University of Southampton, has demonstrated that a nanoscale device, called a memristor, could be used to power artificial systems that can mimic the human brain.Artificial neural networks (ANNs) exhibit learning abilities and can perform tasks which are difficult for conventional computing systems, such as pattern recognition, on-line learning and classification. Practical ANN implementations are currently hampered by the lack of efficient hardware synapses; a key component that every ANN requires in large numbers.In the study, published in Nature Communications, the Southampton research team experimentally demonstrated an ANN that used memristor synapses supporting sophisticated learning rules in order to carry out reversible learning of noisy input data.Memristors are electrical components that limit or regulate the flow of electrical current in a circuit and can remember the amount of charge that was flowing through it and retain the data, even when the power is turned off.Lead author Dr Alex Serb, from Electronics and Computer Science at the University of Southampton, said: "If we want to build artificial systems that can mimic the brain in function and power we need to use hundreds of billions, perhaps even trillions of artificial synapses, many of which must be able to implement learning rules of varying degrees of complexity. Whilst currently available electronic components can certainly be pieced together to create such synapses, the required power and area efficiency benchmarks will be extremely difficult to meet -if even possible at all- without designing new and bespoke 'synapse components'."Memristors offer a possible route towards that end by supporting many fundamental features of learning synapses (memory storage, on-line learning, computationally powerful learning rule implementation, two-terminal structure) in extremely compact volumes and at exceptionally low energy costs. If artificial brains are ever going to become reality, therefore, memristive synapses have to succeed."Acting like synapses in the brain, the metal-oxide memristor array was capable of learning and re-learning input patterns in an unsupervised manner within a probabilistic winner-take-all (WTA) network. This is extremely useful for enabling low-power embedded processors (needed for the Internet of Things) that can process in real-time big data without any prior knowledge of the data.Co-author Dr Themis Prodromakis, Reader in Nanoelectronics and EPSRC Fellow in Electronics and Computer Science at the University of Southampton, said: "The uptake of any new technology is typically hampered by the lack of practical demonstrators that showcase the technology's benefits in practical applications. Our work establishes such a technological paradigm shift, proving that nanoscale memristors can indeed be used to formulate in-silico neural circuits for processing big-data in real-time; a key challenge of modern society."We have shown that such hardware platforms can independently adapt to its environment without any human intervention and are very resilient in processing even noisy data in real-time reliably. This new type of hardware could find a diverse range of applications in pervasive sensing technologies to fuel real-time monitoring in harsh or inaccessible environments; a highly desirable capability for enabling the Internet of Things vision."Reference:KY259-SDUS5EB-002GKY259-SDUS5AB-002GKY259-SDUS5AB-001G 

Toshiba Corporation today announced that it has developed the world's first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba's NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba's previous flagship process. The second stage of Fab 5 is currently under construction, and the new technology will also be deployed there.Toshiba has achieved the world's smallest class chip size with the 15nm process plus improved peripheral circuitry technology. The new chips achieve the same write speed as chips formed with second generation 19 nm process technology, but boost the data transfer rate to 533 megabits a second, 1.3 times faster, by employing a high speed interface.Toshiba is now applying the 15nm process technology 3-bit-per-cell chips, and aims to start mass production in the first quarter of this fiscal year, to June 2014. The company will develop controllers for embedded NAND flash memory in parallel and introduce 3-bit-per-cell products for smartphones and tablets, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).