ON Semiconductor FJX3013RTF

Brief Description: The FJX3013RTF is a pre-biased NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for surface-mount applications. It has a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA.

Features:

• Pre-biased NPN transistor
• Collector-emitter breakdown voltage: 50V
• Maximum collector current: 100mA
• DC current gain (hFE): 68 (min) @ 5mA, 5V
• Frequency transition: 250MHz
• Lead-free and RoHS compliant
• Surface-mount package: SC-70 (SOT323)
• Power dissipation: 200mW
• Operating temperature range: -55°C to 150°C

Application Grade: The FJX3013RTF is suitable for general-purpose applications, including:

• Low-power amplifiers
• Switching circuits
• Signal amplifiers
• Power control circuits

Applications:

• Consumer electronics, such as audio amplifiers, power supplies, and motor control circuits
• Industrial control systems, including sensors, actuators, and motor control circuits
• Automotive applications, including engine management systems, power windows, and door locks
• Medical devices, such as pacemakers, defibrillators, and medical imaging equipment

Overall, the FJX3013RTF is a versatile and reliable transistor suitable for a wide range of applications requiring low-power amplification and switching.