ON Semiconductor NTD5407NG

Brief Description: The NTD5407NG is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is a surface-mount device with a TO-252-3 package (DPak) and is designed for switching applications.

Features:

• Continuous drain current (ID): 38A
• Drain-source on resistance (Rds(on)): 0.026 Ohm
• Drain to source breakdown voltage (Vds): 40V
• Operating temperature: -55°C to 175°C (TJ)
• Power dissipation: 75W
• Pulsed drain current (IDM): 75A
• Gate to source voltage (Vgs): ±20V
• Gate charge (Qg): 20nC @ 10V
• Input capacitance (Ciss): 1000pF @ 32V
• Fall time (Typ): 51 ns
• Rise time: 17 ns
• Turn off delay time: 66 ns

Application Grade: The NTD5407NG is designed for high-power switching applications, such as power supplies, motor controls, and LED lighting.

Applications:

• Power supplies
• Motor controls
• LED lighting
• Switching power supplies
• High-power switching applications

Key Information:

• The NTD5407NG is a single N-channel MOSFET with a continuous drain current of 38A and a drain-source on resistance of 0.026 Ohm.
• It has a drain to source breakdown voltage of 40V and can operate at temperatures ranging from -55°C to 175°C.
• The device has a power dissipation of 75W and a pulsed drain current of 75A.
• It is designed for high-power switching applications and is suitable for use in power supplies, motor controls, and LED lighting.