ON Semiconductor FDMC8676

Brief Description: The FDMC8676 is a N-Channel PowerTrench MOSFET from ON Semiconductor, designed for high-power, high-frequency applications. It features a 30V drain-to-source breakdown voltage, a maximum RDS(on) of 5.9mΩ, and a maximum power dissipation of 2.3W.

Features:

• N-Channel PowerTrench MOSFET
• 30V drain-to-source breakdown voltage
• Maximum RDS(on) of 5.9mΩ at 14.7A and 10V
• Maximum power dissipation of 2.3W
• Turn-on delay time of 9ns and turn-off delay time of 22ns
• Rise time of 3ns and fall time of 2ns
• Input capacitance (Ciss) of 1935pF at 15V
• Gate charge (Qg) of 30nC at 10V
• Operating temperature range of -55°C to 150°C

Application Grade: The FDMC8676 is designed for high-power, high-frequency applications such as:

• Power supplies
• Motor control
• Power conversion
• High-frequency switching

Applications:

• Power supplies for industrial and automotive applications
• Motor control systems for industrial and automotive applications
• Power conversion systems for industrial and automotive applications
• High-frequency switching applications for industrial and automotive applications

Note: The FDMC8676 is an obsolete part, and it is recommended to use alternative parts for new designs.