ON Semiconductor FDBL86366-F085

Brief Description: The FDBL86366-F085 is an N-Channel Power MOSFET from ON Semiconductor, designed for high-power applications. It features a continuous drain current of 220A and a drain-to-source voltage of 80V.

Features:

• Continuous drain current (ID): 220A
• Drain-to-source voltage (Vdss): 80V
• Drive voltage (Max Rds On, Min Rds On): 10V
• FET type: N-Channel
• Gate charge (Qg) (Max) @ Vgs: 112nC @ 10V
• Input capacitance (Ciss) (Max) @ Vds: 6320pF @ 40V
• Operating temperature: -55°C to 175°C TJ
• Power dissipation (Max): 300W Tj
• Rds On (Max) @ Id, Vgs: 3mΩ @ 80A, 10V
• Vgs (Max): ±20V
• Vgs(th) (Max) @ Id: 4V @ 250μA

Application Grade: The FDBL86366-F085 is designed for high-power applications, such as power supplies, motor control, and power conversion.

Applications:

• Power supplies
• Motor control
• Power conversion
• Automotive applications (AEC-Q101 compliant)
• Industrial applications
• Power electronics

Key Information:

• Continuous drain current: 220A
• Drain-to-source voltage: 80V
• Operating temperature: -55°C to 175°C TJ
• Power dissipation: 300W Tj
• Rds On: 3mΩ @ 80A, 10V
• Vgs: ±20V
• Vgs(th): 4V @ 250μA

Overall, the FDBL86366-F085 is a high-power N-Channel Power MOSFET designed for demanding applications, with a continuous drain current of 220A and a drain-to-source voltage of 80V.