STMicroelectronics STF5N60M2

Brief Description: The STF5N60M2 is a N-Channel MOSFET from STMicroelectronics, designed for high-power applications. It features a high drain-to-source voltage of 600V and a continuous drain current of 3.7A.

Features:

• High drain-to-source voltage (Vdss) of 600V
• Continuous drain current (ID) of 3.7A
• High power dissipation (Max) of 20W
• Low Rds(on) of 1.4Ω at 1.85A and 10V
• High gate-to-source voltage (Vgs) of ±25V
• High gate charge (Qg) of 4.5nC at 10V
• Operating temperature range of -40°C to 150°C
• Lead-free and RoHS3 compliant

Application Grade: The STF5N60M2 is designed for high-power applications, such as:

• Power supplies
• Motor drives
• Power conversion
• High-voltage switching

Applications:

• Power supplies for industrial and commercial applications
• Motor drives for industrial and automotive applications
• Power conversion for renewable energy systems
• High-voltage switching for industrial and commercial applications

Overall, the STF5N60M2 is a high-power N-Channel MOSFET designed for demanding applications that require high voltage and current handling capabilities. Its features and specifications make it suitable for a wide range of applications, including power supplies, motor drives, and power conversion systems.