STMicroelectronics STD6N60M2

Brief Description: The STD6N60M2 is a N-Channel MOSFET from STMicroelectronics, part of the MDmesh? II Plus series. It is a single-channel, surface-mount device with a TO-252-3 package, designed for high-power applications.

Features:

• High-power N-Channel MOSFET with a maximum drain current of 4.5A
• High-voltage rating with a breakdown voltage of 600V
• Low on-resistance of 1.2Ω at 2.25A and 10V
• Fast switching times: fall time of 22.5ns, rise time of 7.4ns, and turn-on/off delay times of 9.5ns and 24ns, respectively
• High-temperature operation range of -55°C to 150°C
• Lead-free and RoHS3 compliant
• Moisture sensitivity level (MSL) of 1 (unlimited)

Application Grade: The STD6N60M2 is designed for high-power applications, such as:

• Power supplies
• Motor control
• Power conversion
• Renewable energy systems

Applications:

• High-power switching
• High-voltage power supplies
• Motor control systems
• Power conversion systems
• Renewable energy systems
• Automotive applications (e.g., powertrain, infotainment, and safety systems)

Overall, the STD6N60M2 is a high-power N-Channel MOSFET with a wide range of applications in various industries, including automotive, industrial, and consumer electronics.