STMicroelectronics STP14NM65N

Brief Description: The STP14NM65N is a N-Channel MOSFET from STMicroelectronics, designed for switching applications. It features a high drain-to-source breakdown voltage of 650V and a maximum continuous drain current of 12A.

Features:

• N-Channel MOSFET with a high drain-to-source breakdown voltage of 650V
• Maximum continuous drain current of 12A
• Maximum drain current (abs) of 12A
• Nominal Vgs of 3V
• Operating temperature range of -40°C to 150°C
• Package type: TO-220-3
• Lead-free and RoHS3 compliant
• High power dissipation of 125W
• Low on-resistance of 380mΩ

Application Grade: The STP14NM65N is designed for high-power switching applications, such as motor control, power supplies, and inverters.

Applications:

• Motor control
• Power supplies
• Inverters
• High-power switching applications
• General-purpose switching applications

Key Specifications:

• Drain-to-source breakdown voltage: 650V
• Maximum continuous drain current: 12A
• Maximum drain current (abs): 12A
• Nominal Vgs: 3V
• On-resistance: 380mΩ
• Power dissipation: 125W
• Package type: TO-220-3
• Lead-free and RoHS3 compliant

Overall, the STP14NM65N is a high-power N-Channel MOSFET designed for high-power switching applications, offering a high drain-to-source breakdown voltage, high maximum continuous drain current, and low on-resistance.