STMicroelectronics STF10NM60ND

Brief Description: The STF10NM60ND is a N-Channel MOSFET from STMicroelectronics, designed for switching applications. It features a high drain-to-source breakdown voltage of 650V and a maximum drain current of 8A.

Features:

• High drain-to-source breakdown voltage: 650V
• Maximum drain current: 8A
• N-Channel MOSFET with enhancement mode
• Low on-resistance: 550mΩ
• High power dissipation: 25W
• Operating temperature range: -55°C to 150°C
• Lead-free and RoHS3 compliant
• ISOLATED case connection
• Through-hole mounting

Application Grade: The STF10NM60ND is designed for high-power switching applications, such as:

• Power supplies
• Motor control
• Lighting systems
• Renewable energy systems

Applications:

• Switching power supplies
• Motor control systems
• Lighting systems
• Renewable energy systems
• Power conversion and inversion
• High-power switching applications

Key Specifications:

• Drain-to-source breakdown voltage: 650V
• Maximum drain current: 8A
• On-resistance: 550mΩ
• Power dissipation: 25W
• Operating temperature range: -55°C to 150°C
• Case connection: ISOLATED
• Mounting type: Through-hole
• Package: TO-220-3 Full Pack
• Packaging: Tube

Overall, the STF10NM60ND is a high-power N-Channel MOSFET designed for switching applications, offering high reliability and performance in a compact package.