STMicroelectronics STD16N65M2

Brief Description: The STD16N65M2 is a high-power N-channel MOSFET from STMicroelectronics, part of the MDmesh M2 series. It is designed for high-voltage and high-current applications, offering a maximum power dissipation of 110W and a maximum drain-to-source voltage of 650V.

Features:

• High-power N-channel MOSFET with a maximum power dissipation of 110W
• Maximum drain-to-source voltage of 650V
• Maximum continuous drain current of 11A
• Maximum Rds(on) of 360mΩ at 5.5A and 10V
• Operating temperature range of -55°C to 150°C
• Surface-mount package (TO-252-3, DPak, SC-63)
• Lead-free and RoHS3 compliant
• ECCN code: EAR99

Application Grade: The STD16N65M2 is designed for high-voltage and high-current applications, such as:

• Power supplies
• Motor drives
• Power conversion
• Renewable energy systems
• Industrial automation

Applications:

• High-voltage and high-current power switching
• High-power motor drives
• Power conversion and inversion
• Renewable energy systems, such as solar and wind power
• Industrial automation and control systems
• Power supplies for industrial and commercial applications

Overall, the STD16N65M2 is a high-performance MOSFET designed for demanding power applications that require high power dissipation, high voltage, and high current. Its robust design and wide operating temperature range make it suitable for a variety of applications in industrial, commercial, and renewable energy sectors.