ROHM Semiconductor RT1E040RPTR

Brief Description: The RT1E040RPTR is a single P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a built-in diode, designed for surface-mount applications. It is a high-power device with a maximum continuous drain current of 4A and a breakdown voltage of 30V.

Features: * P-channel MOSFET with built-in diode * Surface-mount package (8-SMD, Flat Lead) * High-power device with a maximum continuous drain current of 4A * Breakdown voltage of 30V * Low on-resistance of 0.045 Ohm * Enhancement mode operation * Operating temperature range of -40°C to 150°C * RoHS3 compliant * ECCN Code: EAR99

Application Grade: The RT1E040RPTR is designed for high-power switching applications, such as power supplies, motor control, and LED lighting.

Applications: * Power supplies * Motor control * LED lighting * General-purpose switching applications * High-power switching circuits

Key Specifications: * Continuous drain current (ID): 4A * Breakdown voltage (Vdss): 30V * Drain-source on-resistance (Rds On): 0.045 Ohm * Operating temperature range: -40°C to 150°C * Package type: 8-SMD, Flat Lead * Mounting type: Surface mount * RoHS compliance: RoHS3 compliant * ECCN Code: EAR99