STMicroelectronics STD3N95K5AG

Brief Description: The STD3N95K5AG is an N-Channel MOSFET from STMicroelectronics, designed for high-power applications. It features a high drain-to-source breakdown voltage of 950V and a continuous drain current of 2A.

Features:

• High drain-to-source breakdown voltage: 950V
• Continuous drain current: 2A
• High power dissipation: 45W
• Low Rds(on) resistance: 5Ω @ 1A, 10V
• High gate-to-source voltage: ±30V
• Low gate charge: 3.4nC @ 10V
• High operating temperature range: -55°C to 150°C
• Surface mount package: TO-252-3, DPak (2 leads + tab), SC-63
• RoHS3 compliant
• AEC-Q101 qualified for automotive applications
• MDmesh K5 series

Application Grade: The STD3N95K5AG is designed for high-power applications, such as:

• Power supplies
• Motor control
• Power conversion
• Automotive applications (AEC-Q101 qualified)

Applications:

• High-voltage power supplies
• High-power motor control
• Power conversion systems
• Automotive applications, such as power distribution and motor control
• Industrial applications, such as power supplies and motor control
• Renewable energy systems, such as solar and wind power inverters

Overall, the STD3N95K5AG is a high-power N-Channel MOSFET designed for demanding applications that require high voltage, high current, and high power dissipation. Its AEC-Q101 qualification and RoHS3 compliance make it suitable for automotive and industrial applications.