STMicroelectronics STD3N80K5

Brief Description: The STD3N80K5 is a high-power N-channel MOSFET from STMicroelectronics, designed for switching applications. It features a SuperMESH5? structure and is available in a TO-252-3 package.

Features:

• N-channel MOSFET with a SuperMESH5? structure
• High-power switching application
• Operating temperature range: -55°C to 150°C
• Power dissipation: 60W (Tc) and 110W
• Low on-resistance: 3.5Ω @ 1A, 10V
• Fast switching times: Turn-on delay time: 8.5ns, Turn-off delay time: 20.5ns
• High gate-to-source voltage: 30V
• High drain-to-source breakdown voltage: 800V
• High avalanche energy rating: 65mJ
• Lead-free and RoHS3 compliant

Application Grade: The STD3N80K5 is designed for high-power switching applications, such as:

• Power supplies
• Motor control
• Power conversion
• Renewable energy systems

Applications:

• High-power switching
• Power conversion
• Motor control
• Power supplies
• Renewable energy systems

Key Specifications:

• Vgs(th) (Max) @ Id: 5V @ 100μA
• Rds On (Max) @ Id, Vgs: 3.5Ω @ 1A, 10V
• Power dissipation (Max): 60W (Tc) and 110W
• Operating temperature range: -55°C to 150°C
• Gate-to-source voltage: 30V
• Drain-to-source breakdown voltage: 800V
• Avalanche energy rating: 65mJ

Overall, the STD3N80K5 is a high-power N-channel MOSFET designed for switching applications, offering high power dissipation, low on-resistance, and fast switching times.