STMicroelectronics STD25N10F7

Brief Description: The STD25N10F7 is a surface-mount N-channel power MOSFET from STMicroelectronics, part of the DeepGATE? and STripFET? VII series. It is designed for high-power applications and features a maximum continuous drain current of 25A.

Features:

• N-channel power MOSFET
• Maximum continuous drain current: 25A
• Drain-to-source breakdown voltage: 100V
• Drive voltage: 10V (max Rds On, min Rds On)
• Gate-to-source voltage: 20V
• Operating temperature: -55°C to 175°C (TJ)
• Power dissipation: 40W (max)
• Package: TO-252-3 (DPak), surface mount
• Lead-free and RoHS3 compliant
• Radiation hardening: No
• ECCN code: EAR99

Application Grade: The STD25N10F7 is suitable for high-power applications that require high current and low resistance, such as:

• Power supplies and converters
• Motor drives and control systems
• LED lighting and displays
• Power amplifiers and audio equipment

Applications:

• High-power switching and amplification
• Power conversion and inversion
• Motor control and drive systems
• LED lighting and display applications
• Power amplifiers and audio equipment

Overall, the STD25N10F7 is a high-power N-channel power MOSFET designed for applications that require high current, low resistance, and a wide operating temperature range. Its features and specifications make it suitable for a variety of high-power applications, including power supplies, motor drives, and power amplifiers.