STMicroelectronics STS4DNFS30

Brief Description: The STS4DNFS30 is a single N-channel power MOSFET with a built-in Schottky diode, designed for switching applications. It is a surface-mount device with an 8-pin SOIC package and is RoHS3 compliant.

Features:

• Continuous drain current: 4.5A
• Drain-to-source breakdown voltage: 30V
• Drive voltage: 5V (max Rds on) and 10V (min Rds on)
• Gate-to-source voltage: 20V
• Input capacitance: 330pF (max) at 25V
• Gate charge: 4.7nC (max) at 5V
• Power dissipation: 2W
• Pulsed drain current: 13A
• Rds on: 55mΩ (max) at 2A, 10V
• Rise time: 17ns
• Fall time: 6ns
• Turn-off delay time: 15ns
• Operating temperature: -55°C to 150°C (TJ)

Application Grade: The STS4DNFS30 is designed for high-frequency switching applications, such as power supplies, motor control, and LED lighting.

Applications:

• Power supplies
• Motor control
• LED lighting
• Switching applications
• High-frequency switching circuits

Additional Information:

• The device is obsolete and not qualified.
• It has a moisture sensitivity level of 3 (168 hours) and a peak reflow temperature of 260°C.
• The terminal finish is nickel palladium gold, and the terminal form is gull wing with a dual terminal position.
• The device is packaged in a tape and reel format.