ON Semiconductor FDA20N50-F109

Brief Description: The FDA20N50-F109 is a high-power N-Channel MOSFET from ON Semiconductor, designed for switching applications. It features a fast switching speed and high current handling capability.

Features:

• Fast switching speed with fall time (typ) of 105 ns and rise time of 375 ns
• High current handling capability with continuous drain current (ID) of 22A and pulsed drain current (IDM) of 88A
• High voltage rating with drain to source breakdown voltage of 500V
• Low on-resistance (Rds(on) max) of 230mΩ at 11A and 10V
• Operating temperature range of -55°C to 150°C TJ
• RoHS3 compliant and Pb-free
• UniFET? series with enhanced performance and reliability

Application Grade: The FDA20N50-F109 is designed for high-power switching applications, such as:

• Power supplies
• Motor control
• Power conversion
• Renewable energy systems

Applications:

• High-power switching circuits
• Power conversion and conditioning
• Motor control and drive systems
• Renewable energy systems and solar power inverters
• Power supplies and battery chargers

This MOSFET is suitable for applications that require high current handling, fast switching speed, and high voltage rating. Its compact TO-3P-3 package and through-hole mounting make it easy to integrate into various systems.