ON Semiconductor FDB9406-F085

Brief Description: The FDB9406-F085 is an N-Channel Power MOSFET from ON Semiconductor, designed for high-power switching applications. It features a TO-263-3 package and is RoHS3 compliant.

Features:

• Continuous Drain Current (ID): 110A
• Drain to Source Breakdown Voltage: 40V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• FET Type: N-Channel
• Fall Time (Typ): 20 ns
• Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V
• Operating Temperature: -55°C to 175°C TJ
• Power Dissipation: 176W
• Rds On (Max) @ Id, Vgs: 1.8m Ω @ 80A, 10V
• Rise Time: 48ns
• Turn Off Delay Time: 50 ns
• Turn On Delay Time: 28 ns
• Vgs (Max): ±20V
• Vgs(th) (Max) @ Id: 4V @ 250μA

Application Grade: The FDB9406-F085 is designed for automotive applications and is AEC-Q101 qualified.

Applications:

• High-power switching applications
• Automotive applications
• Power management systems
• Power conversion systems
• DC-DC converters
• Motor control systems

Key Information:

• Package: TO-263-3 (D2Pak)
• Mounting Type: Surface Mount
• Number of Elements: 1
• Number of Terminations: 2
• Operating Mode: Enhancement Mode
• Power Dissipation: 176W
• RoHS Status: ROHS3 Compliant
• Pbfree Code: Yes
• Radiation Hardening: No
• Series: Automotive, AEC-Q101, PowerTrench?
• Terminal Finish: Tin (Sn)
• Terminal Form: Gull Wing
• Weight: 1.31247g