ON Semiconductor FDSS2407

Product Description:

The FDSS2407 is a dual N-channel metal-oxide-semiconductor (MOS) field-effect transistor (FET) array from ON Semiconductor. It is designed for switching applications and features a logic-level gate, making it suitable for use in automotive and power applications.

Features:

• Dual N-channel MOSFET array
• Logic-level gate
• PowerTrench technology for improved performance and reliability
• High avalanche energy rating (140 mJ)
• High drain-to-source breakdown voltage (62V)
• Low on-resistance (0.11 Ohm)
• High drain current (3.3A)
• Operating temperature range: -55°C to 150°C
• RoHS3 compliant
• Pb-free

Application Grade:

The FDSS2407 is designed for automotive and power applications, making it suitable for use in harsh environments. Its high avalanche energy rating and high drain-to-source breakdown voltage make it ideal for switching applications where high voltage and current are present.

Applications:

• Automotive power supplies
• Power converters
• DC-DC converters
• Motor control
• Power distribution
• Industrial automation
• Renewable energy systems

Key Specifications:

• Continuous drain current (ID): 3.3A
• Drain-to-source breakdown voltage (Vds): 62V
• Drain-to-source on-resistance (Rds(on)): 0.11 Ohm
• Gate-to-source voltage (Vgs): 20V
• Operating temperature range: -55°C to 150°C
• Power dissipation: 2.27W
• Package: 8-SOIC (0.154, 3.90mm Width)

Additional Information:

• The FDSS2407 is available in a surface-mount package and is RoHS3 compliant.
• It has a factory lead time of 5 weeks.
• The product was published in 2004 and is currently in active production.