Infineon Technologies IRLHS6376TR2PBF

Brief Description: The IRLHS6376TR2PBF is a dual N-channel logic level gate MOSFET array from Infineon Technologies. It is a surface-mount package with a 6-pin VDFN exposed pad and is designed for high-frequency and high-power applications.

Features:

• Dual N-channel MOSFET array
• Logic level gate
• High-frequency operation (9.4 ns fall time, 11 ns rise time, 12 ns recovery time)
• High-power operation (1.5 W maximum power dissipation, 6.6 W power dissipation)
• Low on-resistance (63 mΩ)
• Low threshold voltage (800 mV)
• Surface-mount package with exposed pad
• Lead-free and RoHS compliant
• Operating temperature range: -55°C to 150°C

Application Grade: The IRLHS6376TR2PBF is designed for high-frequency and high-power applications, making it suitable for use in:

• Power switching and control
• Motor control
• Power supplies
• LED lighting
• Automotive applications

Applications:

• Power switching and control in automotive applications
• Motor control in industrial and consumer applications
• Power supplies in data centers and telecommunications
• LED lighting in architectural and commercial applications
• High-frequency and high-power applications in various industries

Note: The part is obsolete, so it may not be available for new designs.