STMicroelectronics STD65N55F3

Brief Description: The STD65N55F3 is a N-Channel MOSFET from STMicroelectronics, designed for switching applications. It features a high-power dissipation of 110W and a low on-resistance of 8.5mΩ, making it suitable for high-current and high-voltage applications.

Features:

• N-Channel MOSFET with enhancement mode
• High-power dissipation of 110W
• Low on-resistance of 8.5mΩ
• High drain-source breakdown voltage of 55V
• High drain current of 80A
• Low turn-on delay time of 20ns and turn-off delay time of 35ns
• High threshold voltage of 4V
• RoHS3 compliant and lead-free
• Surface mount package with a gull wing terminal form

Application Grade: The STD65N55F3 is designed for high-power switching applications, such as:

• Power supplies
• Motor control
• Power conversion
• High-current switching

Applications:

• High-power switching circuits
• Power supplies for industrial and automotive applications
• Motor control systems
• Power conversion circuits
• High-current switching applications

Key Specifications:

• Vgs(th) (Max) @ Id: 4V @ 250μA
• Vgs (Max): ±20V
• Rds On (Max) @ Id, Vgs: 8.5mΩ @ 32A, 10V
• Power Dissipation (Max): 110W
• Drain-source On Resistance-Max: 0.0085Ω
• Drain to Source Breakdown Voltage: 55V
• Drain Current-Max (Abs) (ID): 80A
• Continuous Drain Current (ID): 32A
• Operating Temperature: -55°C ~ 175°C TJ
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Overall, the STD65N55F3 is a high-power N-Channel MOSFET designed for high-current and high-voltage switching applications, offering a combination of high power dissipation, low on-resistance, and a compact surface mount package.