ON Semiconductor FDPC8014S

Brief Description: The FDPC8014S is a dual N-channel power MOSFET from ON Semiconductor, designed for switching applications. It features a logic-level gate and a metal-oxide semiconductor (MOS) technology, making it suitable for high-frequency and high-power applications.

Features:

• Dual N-channel power MOSFET with asymmetrical structure
• Logic-level gate for easy drive
• Metal-oxide semiconductor (MOS) technology for high-frequency and high-power applications
• Avalanche energy rating (EAS) of 73 mJ
• Continuous drain current (ID) of 41 A
• Maximum drain current (IDM) of 110 A
• Drain-to-source voltage (VDS) of 25 V
• Operating temperature range of -55°C to 150°C
• Surface mount package with 8 pins
• RoHS3 compliant and Pb-free

Application Grade: The FDPC8014S is designed for high-power switching applications, such as:

• Power supplies
• Motor control
• Power conversion
• Renewable energy systems

Applications:

• Switching power supplies
• Motor control systems
• Power conversion circuits
• Renewable energy systems
• High-frequency applications requiring high-power switching

Overall, the FDPC8014S is a high-performance power MOSFET designed for demanding switching applications, offering high power handling, high frequency operation, and easy drive capabilities.