ON Semiconductor 2SA1381ESTU

Brief Description: The 2SA1381ESTU is a single PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for amplifier applications. It has a maximum current collector of 100mA and a maximum voltage collector-emitter breakdown of 300V.

Features:

• Single PNP bipolar junction transistor (BJT)
• Maximum current collector: 100mA
• Maximum current collector cutoff: 100nA
• DC current gain (hFE) minimum: 100 at 10mA, 10V
• Frequency transition: 150MHz
• Operating temperature: -55°C to 150°C
• Power dissipation: 7W
• Voltage collector-emitter breakdown: 300V
• Package: TO-225AA, TO-126-3 (through-hole)
• Packaging: Tube
• Polarity/Channel Type: PNP

Application Grade: The 2SA1381ESTU is designed for general-purpose amplifier applications, making it suitable for a wide range of applications.

Applications:

• Amplifiers
• Switches
• Drivers
• Power supplies
• Signal processing circuits
• General-purpose electronics

This transistor is suitable for applications where high-frequency operation, high power dissipation, and high voltage breakdown are required. Its through-hole package and tube packaging make it easy to use in a variety of applications. However, it is important to note that this part is obsolete, so it may be difficult to find or purchase in the future.