STMicroelectronics STT13005D

Brief Description: The STT13005D is a NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for switching applications. It has a collector-emitter breakdown voltage of 400V and a maximum power dissipation of 45W.

Features:

• Collector-emitter breakdown voltage: 400V
• Collector-emitter voltage (VCEO): 400V
• DC current gain (hFE) (min) @ Ic, Vce: 10 @ 500mA, 5V
• Max collector current: 2A
• Max power dissipation: 45W
• Operating temperature: 150°C TJ
• Radiation hardening: No
• RoHS3 compliant
• Transistor type: NPN

Application Grade: The STT13005D is designed for switching applications, making it suitable for use in power switching circuits, motor control, and other high-power applications.

Applications:

• Power switching circuits
• Motor control
• High-power applications
• Industrial control systems
• Automotive electronics
• Aerospace and defense systems

Additional Information:

• The transistor is packaged in a TO-225AA or TO-126-3 package, with a matte tin (Sn) terminal finish.
• The transistor has a moisture sensitivity level (MSL) of 1, indicating that it is not sensitive to moisture and can be stored in a non-controlled environment.
• The transistor is obsolete, but still available for purchase.
• The transistor is not radiation-hardened, making it unsuitable for use in applications where radiation resistance is required.