ON Semiconductor MJE271G

Brief Description: The MJE271G is a PNP Darlington transistor manufactured by Rochester Electronics, LLC. It is a bulk-packaged, through-hole mounted device with a TO-225AA (TO-126-3) package.

Features:

• PNP Darlington transistor with a maximum power dissipation of 1.5W
• ROHS3 compliant
• Operating temperature range: -65°C to 150°C (TJ)
• Moisture Sensitivity Level (MSL) 1 (unlimited)
• Frequency transition: 6MHz
• DC current gain (hFE) minimum: 1500 at 120mA, 10V
• Voltage collector-emitter breakdown (Max): 100V
• Current collector (Ic) (Max): 2A
• Current collector cutoff (Max): 1mA
• Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA

Application Grade: The MJE271G is an obsolete device, which means it is no longer being manufactured or supported by the original manufacturer. However, it may still be available from secondary sources or used in existing applications.

Applications: The MJE271G is suitable for a variety of applications, including:

• Audio and power amplifiers
• Switching power supplies
• Motor control
• Industrial automation
• Medical equipment
• Automotive electronics

Note that the MJE271G is an obsolete device, and its availability and suitability for new designs may be limited. It is recommended to use alternative devices or components that are still in production and supported by the manufacturer.