ON Semiconductor TIP30C

Brief Description: The TIP30C is a PNP bipolar junction transistor (BJT) manufactured by Rochester Electronics, LLC. It is a single-transistor device with a TO-220-3 package and a maximum power dissipation of 30W.

Features:

• Collector-base voltage (VCBO): 100V
• Collector-emitter breakdown voltage (VCEO): 100V
• Collector-emitter voltage (VCEO): 100V
• Configuration: Single
• Current rating: -1A
• DC current gain (hFE): 15 at 1A, 4V
• Emitter-base voltage (VEBO): 5V
• Maximum collector current: 1A
• Power dissipation: 30W
• Operating temperature: 150°C (TJ)
• Package: TO-220-3
• Packaging: Tube
• Polarity/Channel Type: PNP
• Transistor application: Switching
• Transistor element material: Silicon
• Transistor type: PNP
• Transition frequency: 3MHz
• Vce saturation (max): 700mV at 125mA, 1A

Application Grade: The TIP30C is a commercial-grade transistor, suitable for general-purpose applications.

Applications: The TIP30C is designed for switching applications, including:

• Power amplifiers
• Switching power supplies
• Motor control
• Audio amplifiers
• Industrial control systems

Note: The TIP30C is an obsolete part, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available from distributors or through secondary markets.