ON Semiconductor TIP29ATU

Brief Description: The TIP29ATU is a NPN power transistor from ON Semiconductor, designed for general-purpose applications. It is a single-element, through-hole mounted device with a TO-220-3 package.

Features:

• Power dissipation: 2W
• Voltage - Collector Emitter Breakdown (Max): 60V
• Voltage - Rated DC: 60V
• Transistor Type: NPN
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
• Gain Bandwidth Product: 3MHz
• Frequency - Transition: 3MHz
• Frequency: 3MHz
• Emitter Base Voltage (VEBO): 5V
• Collector Emitter Voltage (VCEO): 60V
• Collector Base Voltage (VCBO): 60V
• Current Rating: 1A
• Current - Collector Cutoff (Max): 300μA
• Current-Collector (Ic) (Max): 1A

Application Grade: The TIP29ATU is a general-purpose power transistor suitable for a wide range of applications, including power amplifiers, switching circuits, and linear regulators.

Applications:

• Power amplifiers
• Switching circuits
• Linear regulators
• General-purpose power applications
• Automotive electronics
• Industrial control systems
• Consumer electronics

Key Information:

• Power dissipation: 2W
• Voltage rating: 60V
• Current rating: 1A
• Frequency range: 3MHz
• Gain bandwidth product: 3MHz
• Emitter base voltage: 5V
• Collector emitter voltage: 60V
• Collector base voltage: 60V
• Mounting type: Through-hole
• Package: TO-220-3
• Operating temperature: -65°C to 150°C
• RoHS compliant
• Lead-free

Note: The TIP29ATU is an obsolete part, and it is recommended to use alternative products for new designs.