ON Semiconductor BSP51

Brief Description: The BSP51 is a NPN Darlington transistor from ON Semiconductor, designed for surface mount applications. It is a single-element bipolar junction transistor (BJT) with a high current gain and a maximum power dissipation of 1W.

Features:

• High current gain (hFE) of 1000 at 150mA and 10V
• Maximum collector current of 500mA
• Maximum power dissipation of 1W
• Operating temperature range of -55°C to 150°C
• Lead-free and RoHS compliant
• Surface mount package (TO-261-4, TO-261AA)
• Tape and reel packaging

Application Grade: The BSP51 is designed for general-purpose applications, including power amplifiers, drivers, and switching circuits.

Applications:

• Power amplifiers
• Drivers
• Switching circuits
• General-purpose applications requiring high current gain and moderate power dissipation

Key Parameters:

• Collector-base voltage (VCBO): 90V
• Collector-emitter breakdown voltage: 80V
• Collector-emitter voltage (VCEO): 60V
• Current rating: 800mA
• DC current gain (hFE): 1000 at 150mA and 10V
• Maximum collector current: 500mA
• Maximum power dissipation: 1W
• Operating temperature range: -55°C to 150°C
• Package: TO-261-4, TO-261AA
• Packaging: Tape and reel (TR)

Overall, the BSP51 is a reliable and versatile NPN Darlington transistor suitable for a wide range of applications requiring high current gain and moderate power dissipation.