ON Semiconductor BC638BU

Brief Description: The BC638BU is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element, through-hole mounted transistor with a TO-226-3 or TO-92-3 package.

Features:

• Collector-Emitter Voltage (VCEO): 500mV
• Current - Collector Cutoff (Max): 100nA ICBO
• Current Rating: -1A
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Frequency: 100MHz
• Gain Bandwidth Product: 100MHz
• Max Collector Current: 1A
• Max Power Dissipation: 1W
• Operating Temperature: 150°C TJ
• Voltage - Rated DC: -60V
• Collector-Emitter Saturation Voltage: -500mV
• Collector-Emitter Breakdown Voltage: 60V
• Collector Base Voltage (VCBO): -60V

Application Grade: The BC638BU is an obsolete product, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available from distributors or resellers.

Applications:

• General-purpose switching and amplification applications
• Low-power audio amplifiers
• Low-voltage power supplies
• Automotive and industrial control applications
• Medical and healthcare equipment

Note: The BC638BU is a PNP transistor, which means it is suitable for applications where a positive voltage is applied to the collector and a negative voltage is applied to the emitter.