ON Semiconductor BD438TG

Brief Description: The BD438TG is a PNP bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose applications. It features a high collector-emitter breakdown voltage and a high current gain, making it suitable for use in a variety of electronic circuits.

Features:

• High collector-emitter breakdown voltage: 45V
• High collector-emitter voltage: 700mV
• High current gain: 85 (min) at 500mA, 1V
• High transition frequency: 3MHz
• High power dissipation: 36W
• High collector current: 4A
• High emitter-base voltage: 5V
• Halogen-free and lead-free
• RoHS compliant
• Operating temperature range: -55°C to 150°C
• Mounting type: Through-hole
• Package: TO-225AA, TO-126-3
• Packaging: Tube
• Polarity/Channel Type: PNP

Application Grade: The BD438TG is designed for general-purpose applications, making it suitable for use in a variety of electronic circuits, including:

• Power amplifiers
• Switching circuits
• Driver circuits
• Power supplies
• Automotive applications

Applications:

• Power amplifiers for audio and video applications
• Switching circuits for power supplies and motor control
• Driver circuits for relays and solenoids
• Power supplies for industrial and automotive applications
• Automotive applications, such as engine management and anti-lock braking systems (ABS)

Overall, the BD438TG is a high-performance PNP BJT that offers a combination of high voltage, high current, and high frequency performance, making it an excellent choice for a wide range of electronic applications.