ON Semiconductor BD239C

Brief Description: The BD239C is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element transistor designed for general-purpose applications.

Features:

• Collector-base voltage (VCBO): 100V
• Collector-emitter breakdown voltage: 100V
• Collector-emitter saturation voltage: 700mV
• Current-collector (Ic) maximum: 2A
• Current-collector cutoff maximum: 300μA
• DC current gain (hFE) minimum: 15 at 1A, 4V
• Operating temperature range: -65°C to 150°C
• Power dissipation: 30W
• Mounting type: through-hole
• Package: TO-220-3
• RoHS compliant: ROHS3

Application Grade: The BD239C is a general-purpose transistor suitable for a wide range of applications, including:

• Power amplifiers
• Switching circuits
• Driver circuits
• General-purpose switching and amplification

Applications:

• Power amplifiers for audio and video applications
• Switching circuits for motor control, lighting, and other applications
• Driver circuits for relays, solenoids, and other devices
• General-purpose switching and amplification in industrial, automotive, and consumer electronics applications

Overall, the BD239C is a versatile and reliable transistor that can be used in a variety of applications where high current and power handling are required.