STMicroelectronics 2STC4467

Brief Description: The 2STC4467 is a NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for switching applications. It features a high power dissipation of 80W and a maximum collector current of 8A.

Features:

• High power dissipation: 80W
• Maximum collector current: 8A
• Maximum breakdown voltage: 120V
• DC current gain (hFE): 70 @ 3A, 4V
• Frequency: 20MHz
• Gain bandwidth product: 20MHz
• Operating temperature: 150°C TJ
• Radiation hardening: No
• RoHS3 compliant
• Lead-free

Application Grade: The 2STC4467 is designed for switching applications, making it suitable for use in power electronics, motor control, and other high-power applications.

Applications:

• Power electronics
• Motor control
• High-power switching
• Industrial control
• Automotive electronics

Key Information:

• Collector-base voltage (VCBO): 120V
• Collector-emitter breakdown voltage: 120V
• Collector-emitter voltage (VCEO): 120V
• Current - collector cutoff (max): 10μA ICBO
• DC current gain (hFE) (min) @ Ic, Vce: 70 @ 3A, 4V
• Emitter-base voltage (VEBO): 6V
• Frequency: 20MHz
• Gain bandwidth product: 20MHz
• Maximum collector current: 8A
• Maximum power dissipation: 80W
• Operating temperature: 150°C TJ
• Package / case: TO-3P-3, SC-65-3
• Packaging: Tube
• Polarity/Channel Type: NPN
• Power dissipation: 80W
• Radiation hardening: No
• RoHS status: ROHS3 compliant
• Terminal finish: Matte Tin (Sn)
• Time@Peak Reflow Temperature-Max (s): 30
• Transistor application: SWITCHING
• Transistor element material: SILICON
• Transistor type: NPN
• Transition frequency: 20MHz
• Vce saturation (max) @ Ib, Ic: 1.5V @ 300mA, 3A