STMicroelectronics STBV32G-AP

Brief Description: The STBV32G-AP is a NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for switching applications. It features a collector-emitter breakdown voltage of 400V and a maximum collector current of 1.5A.

Features:

• Collector-emitter breakdown voltage: 400V
• Collector-emitter voltage (VCEO): 400V
• DC current gain (hFE) (min): 5 @ 1A, 2V
• Emitter-base voltage (VEBO): 9V
• Maximum breakdown voltage: 400V
• Maximum collector current: 1.5A
• Maximum power dissipation: 1.5W
• Operating temperature: 150°C (TJ)
• Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Packaging: Tape & Box (TB)
• RoHS compliant: ROHS3
• Terminal finish: Matte Tin (Sn)
• Terminal position: BOTTOM
• Transistor application: SWITCHING
• Transistor element material: SILICON
• Transistor type: NPN

Application Grade: The STBV32G-AP is designed for general-purpose switching applications, making it suitable for a wide range of applications, including:

• Power switching
• Signal switching
• Amplification
• Level shifting

Applications:

• Power supplies
• Motor control
• Lighting control
• Audio amplification
• Industrial automation
• Consumer electronics

Note: The STBV32G-AP is an obsolete part, which means it is no longer being manufactured or supported by the manufacturer. However, it may still be available from distributors or through secondary markets.