ON Semiconductor SFT1202-E

Product Description:

The SFT1202-E is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is a single-element, through-hole packaged transistor with a TO-251-3 short leads, IPak, TO-251AA package. The transistor is designed for switching applications and is suitable for use in a variety of electronic systems.

Features:

• Collector-base voltage (VCBO): 180V
• Collector-emitter breakdown voltage (VCEO): 150V
• Collector-emitter voltage (VCEO): 150V
• DC current gain (hFE) (min): 200 at 100mA, 5V
• Maximum collector current: 2A
• Maximum power dissipation: 1W
• Operating temperature: 150°C TJ
• Transition frequency: 140MHz
• Vce saturation (max): 165mV at 100mA, 1A

Application Grade:

The SFT1202-E is designed for general-purpose switching applications and is suitable for use in a variety of electronic systems, including:

• Power supplies
• Motor control
• Audio amplifiers
• Industrial control
• Automotive electronics

Applications:

• Switching applications
• Power amplifiers
• Motor control
• Industrial control
• Automotive electronics
• General-purpose electronics

Key Information:

• Part number: SFT1202-E
• Manufacturer: ON Semiconductor
• Package type: TO-251-3 short leads, IPak, TO-251AA
• Package size: Through-hole
• Number of pins: 3
• Terminal finish: Tin/bismuth (Sn/Bi)
• Polarity/channel type: NPN
• Transistor type: NPN
• Transistor element material: Silicon
• Radiation hardening: No
• RoHS compliance: ROHS3 compliant
• Lead-free: Yes
• ECCN code: EAR99
• JESD-609 code: e6
• MSL: 1 (unlimited)
• Factory lead time: 2 weeks
• Published: 2012