ON Semiconductor 2N5885G

Brief Description: The 2N5885G is a high-power NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for switching applications and can handle high currents and voltages.

Features:

• High-power NPN BJT with a maximum collector current of 25A and a maximum power dissipation of 200W
• Collector-base voltage (VCBO) and collector-emitter breakdown voltage (VCEO) of 60V
• Collector-emitter saturation voltage (VCE(sat)) of 1V
• High current gain (hFE) of 20 at a collector current of 10A and a collector-emitter voltage of 4V
• Frequency and gain bandwidth product of 4MHz
• Operating temperature range of -65°C to 200°C
• Lead-free and RoHS3 compliant
• Through-hole mounting type
• Package types: TO-204AA and TO-3

Application Grade: The 2N5885G is designed for high-power switching applications, such as power amplifiers, motor controls, and power supplies.

Applications:

• Power amplifiers
• Motor controls
• Power supplies
• Switching power supplies
• High-power switching applications
• Industrial control systems
• Automotive applications (e.g., motor controls, power supplies)

Note: The above information is based on the provided product parameters and is intended to provide a comprehensive description of the product. However, it is always recommended to consult the manufacturer''s datasheet and product documentation for the most up-to-date and accurate information.