STMicroelectronics SD56120

Brief Description: The SD56120 is a dual N-channel LDMOS (Lateral Diffused Metal Oxide Semiconductor) RF power MOSFET from STMicroelectronics. It is designed for high-power amplifier applications and can operate at frequencies up to 860MHz.

Features:

• Dual N-channel LDMOS configuration
• High-power amplifier application
• Frequency range: 860MHz
• Gain: 16dB
• Input capacitance: 82pF
• Drain to Source Breakdown Voltage: 65V
• Drain to Source Voltage (Vdss): 65V
• Current Rating: 14A
• Power Dissipation: 217W
• Maximum Operating Temperature: 200°C
• Minimum Operating Temperature: -65°C
• Lead Free: Yes
• RoHS3 Compliant
• Radiation Hardening: No

Application Grade: The SD56120 is designed for high-power amplifier applications, making it suitable for use in RF power amplifiers, wireless communication systems, and other high-frequency applications.

Applications: The SD56120 can be used in a variety of applications, including:

• RF power amplifiers
• Wireless communication systems
• Satellite communication systems
• Radar systems
• Military communication systems
• Industrial, scientific, and medical (ISM) applications

Note: The SD56120 is an obsolete part, and it is recommended to use alternative products for new designs.