STMicroelectronics STGP10M65DF2

Brief Description: The STGP10M65DF2 is a Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-power switching applications. It features a collector-emitter breakdown voltage of 650V, making it suitable for high-voltage applications.

Features:

• Collector-Emitter Breakdown Voltage: 650V
• Collector-Emitter Saturation Voltage: 1.55V
• Collector Emitter Voltage (VCEO): 2V
• Current - Collector Pulsed (Icm): 40A
• Gate Charge: 28nC
• IGBT Type: Trench Field Stop
• Input Type: Standard
• Operating Temperature: -55°C to 175°C TJ
• Max Collector Current: 20A
• Max Power Dissipation: 115W
• Mount: Through Hole
• Number of Pins: 3
• Package / Case: TO-220-3
• Packaging: Tube
• Reverse Recovery Time: 96ns
• Switching Energy: 120μJ (on), 270μJ (off)
• Td (on/off) @ 25°C: 19ns/91ns

Application Grade: The STGP10M65DF2 is designed for high-power switching applications, such as:

• Motor control
• Power supplies
• Renewable energy systems
• Industrial automation

Applications:

• High-voltage switching applications
• High-power motor control
• Power supplies for industrial and commercial applications
• Renewable energy systems, such as solar and wind power
• Industrial automation and control systems

Overall, the STGP10M65DF2 is a high-power IGBT designed for high-voltage and high-current applications, offering excellent switching performance and reliability.