Texas Instruments 2N5401

Brief Description: The 2N5401 is a PNP bipolar junction transistor (BJT) manufactured by Central Semiconductor. It is a single-element, through-hole mounted device with a TO-92 package.

Features:

• PNP bipolar junction transistor (BJT)
• Single-element configuration
• Through-hole mounting
• TO-92 package
• RoHS compliant
• Not qualified for automotive or medical applications
• Power dissipation: 625mW
• Peak collector current: 600mA
• Collector-emitter voltage: 150V
• Gain bandwidth product: 300MHz
• Frequency transition: 300MHz
• DC current gain: 60 (minimum)
• Emitter-base voltage: 5V
• Collector-emitter saturation voltage: 500mV
• Collector-emitter breakdown voltage: 150V

Application Grade: The 2N5401 is a general-purpose transistor suitable for a wide range of applications, including amplifiers, switches, and drivers.

Applications:

• Amplifiers
• Switches
• Drivers
• General-purpose applications requiring a PNP BJT
• Not suitable for high-reliability or critical applications due to its not-qualified status

Note: The product parameters and features provided are based on the given information and may not be exhaustive or up-to-date. It is recommended to verify the information with the manufacturer or a reliable source before using the product.