Texas Instruments CD4012BE

CD4012BE Description

CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.
The CD4012BE is a CMOS dual 4-input NAND Gate provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. Meets all requirements of JEDEC tentative standard no. 13B, "standard specifications for description of "B" series CMOS devices".

CD4012BE Features

• High-Voltage Types (20V Rating)
• Propagation Delay Time = 60ns (typ.) at CL = 50pF,VDD = 10V
• Buffered Inputs and Outputs
• Standardized Symmetrical Output Characteristics
• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC
• 100% Tested for Maximum Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standards No. 13B, “Standard Specifications for Description of “B” Series CMOS Device’s

CD4012BE Applications

Signal Processing